...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Physics Letters >Carrier relaxation bottleneck in type-Ⅱ InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 μm
【24h】

Carrier relaxation bottleneck in type-Ⅱ InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 μm

机译：Ⅱ型InAs / InGaAlAs / InP（001）耦合量子点-量子阱结构中载流子弛豫瓶颈的发射峰为1.55μm

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Carrier relaxation in self-assembled InAs/In0.53Ga0.23Al0.24As/InP(001) quantum dots emitting at 1.55 mu m and quantum dots coupled to the In0.64Ga0.36As/In0.53Ga0.23Al0.24As quantum well through a thin In0.53Ga0.23Al0.24As barrier is investigated employing high-temporal-resolution ( 0.3 ps), time-resolved spectroscopic techniques at cryogenic temperatures, supported additionally with photoluminescence, photoluminescence excitation, and theoretical modelling. We focused on intra-band carrier relaxation pathways that solely determine the observed non-equilibrium carrier population kinetics. We ascertained relatively fast carrier capture and intra-band relaxation process in a reference structure with quantum dots only (similar to 8 ps time constant) and even faster initial relaxation in the coupled system (similar to 4 ps). An evident bottleneck effect is observed for the final relaxation stage in the coupled quantum dots-quantum well system slowing down the overall relaxation process by a factor of 5. The effect is attributed to a peculiar picture of the confined conduction band states in the coupled system exhibiting significant changes in the spatial distribution between the relevant lowest-lying electronic states. Published by AIP Publishing.
机译：自组装InAs / In0.53Ga0.23Al0.24As / InP（001）量子点的载流子弛豫以1.55μm发射，并且量子点通过a耦合到In0.64Ga0.36As / In0.53Ga0.23Al0.24As量子阱中使用高温分辨率（<0.3 ps），低温条件下的时间分辨光谱技术研究了In0.53Ga0.23Al0.24As薄壁垒，并附加了光致发光，光致发光激发和理论建模。我们专注于仅确定观察到的非平衡载波群体动力学的带内载波松弛途径。我们确定了仅具有量子点（类似于8 ps时间常数）的参考结构中相对较快的载波捕获和带内弛豫过程，以及耦合系统中甚至更快的初始弛豫（类似于4 ps）。在耦合量子点-量子阱系统的最终弛豫阶段观察到明显的瓶颈效应，使整个弛豫过程减慢了5倍。该效应归因于耦合系统中受限的导带状态的特殊情况在相关的最低电子状态之间的空间分布上呈现出显着变化。由AIP Publishing发布。

著录项

  • 来源
    《Applied Physics Letters》 |2018年第22期|221901.1-221901.5|共5页
  • 作者

    Syperek M.; Andrzejewski J.; Rogowicz E.; Misiewicz J.; Bauer S.; Sichkovskyi V. I.; Reithmaier J. P.; Sek G.;

  • 作者单位

    Wroclaw Univ Sci & Technol, Dept Expt Phys, Fac Fundamental Problems Technol, Lab Opt Spect Nanostruct, Wybreze Wyspianskiego 27, PL-50370 Wroclaw, Poland;

    Wroclaw Univ Sci & Technol, Dept Expt Phys, Fac Fundamental Problems Technol, Lab Opt Spect Nanostruct, Wybreze Wyspianskiego 27, PL-50370 Wroclaw, Poland;

    Wroclaw Univ Sci & Technol, Dept Expt Phys, Fac Fundamental Problems Technol, Lab Opt Spect Nanostruct, Wybreze Wyspianskiego 27, PL-50370 Wroclaw, Poland;

    Wroclaw Univ Sci & Technol, Dept Expt Phys, Fac Fundamental Problems Technol, Lab Opt Spect Nanostruct, Wybreze Wyspianskiego 27, PL-50370 Wroclaw, Poland;

    Univ Kassel, CINSaT, Inst Nanostruct Technol & Analyt INA, Heinrich Plett Str 40, D-34132 Kassel, Germany;

    Univ Kassel, CINSaT, Inst Nanostruct Technol & Analyt INA, Heinrich Plett Str 40, D-34132 Kassel, Germany;

    Univ Kassel, CINSaT, Inst Nanostruct Technol & Analyt INA, Heinrich Plett Str 40, D-34132 Kassel, Germany;

    Wroclaw Univ Sci & Technol, Dept Expt Phys, Fac Fundamental Problems Technol, Lab Opt Spect Nanostruct, Wybreze Wyspianskiego 27, PL-50370 Wroclaw, Poland;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号