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首页> 外文期刊>Applied Physics Letters >Monolithic echo-less photoconductive switches as a high-resolution detector for terahertz time-domain spectroscopy
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Monolithic echo-less photoconductive switches as a high-resolution detector for terahertz time-domain spectroscopy

机译：单片无回波光电导开关作为太赫兹时域光谱的高分辨率检测器

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摘要

Interdigitated photoconductive (iPC) switches are powerful and convenient devices for time-resolved spectroscopy, with the ability to operate both as sources and detectors of terahertz (THz) frequency pulses. However, reflection of the emitted or detected radiation within the device substrate itself can lead to echoes that inherently limit the spectroscopic resolution achievable for their use in time-domain spectroscopy (TDS) systems. In this work, we demonstrate a design of low-temperature-grown-GaAs (LT-GaAs) iPC switches for THz pulse detection that suppresses such unwanted echoes. This is realized through the growth of a buried multilayer LT-GaAs structure that retains its ultrafast properties, which, after wafer bonding to a metal-coated host substrate, results in an iPC switch with a metal plane buried at a subwavelength depth below the LT-GaAs surface. Using this device as a detector, and coupling it to an echo-less iPC source, enables echo-free THz-TDS and high-resolution spectroscopy, with a resolution limited only by the temporal length of the measurement governed by the mechanical delay line used. As a proof-of-principle, the 2_(12)-2_(21) and the 1_(01)-2_(12) rotational lines of water vapor have been spectrally resolved, demonstrating a spectral resolution below 10 GHz
机译：交叉指型光电导（iPC）开关是功能强大且方便的设备，用于时间分辨光谱分析，可同时用作太赫兹（THz）频率脉冲的源和检测器。但是，发射或检测到的辐射在设备基板本身内部的反射会导致回波，这些回波固有地限制了其在时域光谱（TDS）系统中使用所能达到的光谱分辨率。在这项工作中，我们演示了一种用于THz脉冲检测的低温生长的GaAs（LT-GaAs）iPC开关的设计，该开关可抑制此类有害回波。这是通过保留其超快特性的掩埋多层LT-GaAs结构的生长来实现的，该结构在晶片键合到金属涂层的主机基板上之后，导致iPC开关的金属平面埋在LT以下的亚波长深度-GaAs表面。使用此设备作为检测器，并将其耦合到无回声iPC源，可以实现无回声THz-TDS和高分辨率光谱，其分辨率仅受所用机械延迟线控制的测量时间长度的限制。作为原理证明，水蒸气的2_（12）-2_（21）和1_（01）-2_（12）旋转线已通过光谱解析，证明低于10 GHz的光谱分辨率

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  • 来源
    《Applied Physics Letters》 |2017年第14期|141102.1-141102.4|共4页
  • 作者

    K. Maussang; J. Palomo; J.-M. Manceau; R. Colombelli; I. Sagnes; L. H. Li; E. H. Linfield; A. G. Davies; J. Mangeney; J. Tignon; S. S. Dhillon;

  • 作者单位

    Laboratoire Pierre Aigrain, Ecole Normale Supérieure-PSL Research University, CNRS, Université Pierre et Marie Curie-Sorbonne Universités, Université Denis Diderot-Sorbonne Paris Cite, 24 rue Lhomond, 75231 Paris Cedex 05, France;

    Laboratoire Pierre Aigrain, Ecole Normale Supérieure-PSL Research University, CNRS, Université Pierre et Marie Curie-Sorbonne Universités, Université Denis Diderot-Sorbonne Paris Cite, 24 rue Lhomond, 75231 Paris Cedex 05, France;

    Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Unìversité Paris-Saclay, C2N - Orsay, 91405 Orsay Cedex, France;

    Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Unìversité Paris-Saclay, C2N - Orsay, 91405 Orsay Cedex, France;

    Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Unìversité Paris-Saclay, C2N - Orsay, 91405 Orsay Cedex, France;

    School of Electronic and Electrical Engineering, University of Leeds, Leeds LS9 2JT, United Kingdom;

    School of Electronic and Electrical Engineering, University of Leeds, Leeds LS9 2JT, United Kingdom;

    School of Electronic and Electrical Engineering, University of Leeds, Leeds LS9 2JT, United Kingdom;

    Laboratoire Pierre Aigrain, Ecole Normale Supérieure-PSL Research University, CNRS, Université Pierre et Marie Curie-Sorbonne Universités, Université Denis Diderot-Sorbonne Paris Cite, 24 rue Lhomond, 75231 Paris Cedex 05, France;

    Laboratoire Pierre Aigrain, Ecole Normale Supérieure-PSL Research University, CNRS, Université Pierre et Marie Curie-Sorbonne Universités, Université Denis Diderot-Sorbonne Paris Cite, 24 rue Lhomond, 75231 Paris Cedex 05, France;

    Laboratoire Pierre Aigrain, Ecole Normale Supérieure-PSL Research University, CNRS, Université Pierre et Marie Curie-Sorbonne Universités, Université Denis Diderot-Sorbonne Paris Cite, 24 rue Lhomond, 75231 Paris Cedex 05, France;

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