Analysis of micro-Raman spectra combined with electromagnetic simulation and stress simulation for local stress distribution in Si devices

Tetsuya Tada; Vladimir Poborchii; Toshihiko Kanayama

首页> 外文期刊>Applied Physics Letters >Analysis of micro-Raman spectra combined with electromagnetic simulation and stress simulation for local stress distribution in Si devices

【24h】

Analysis of micro-Raman spectra combined with electromagnetic simulation and stress simulation for local stress distribution in Si devices

机译：微拉曼光谱分析与电磁仿真和应力仿真相结合的硅器件局部应力分布

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We have developed a Raman simulation method using a finite-difference time-domain electromagnetic simulation and a finite element method stress simulation for precise local stress analysis of Si devices. This method accounts for the modification of light distribution by the sample structure, which significantly affects the Raman spectra near a metal gate structure with high refractive index and extinction coefficient. The precise stress estimation by this method is verified by analyzing polarized UV Raman measurements of a metal-oxide semiconductor field-effect transistor structure with a metal gate.

机译：我们已经开发了一种使用有限差分时域电磁仿真和有限元方法应力仿真的拉曼仿真方法，用于Si器件的精确局部应力分析。该方法说明了样品结构对光分布的修改，这极大地影响了具有高折射率和消光系数的金属栅极结构附近的拉曼光谱。通过分析带有金属栅极的金属氧化物半导体场效应晶体管结构的极化UV拉曼测量，可以验证通过这种方法进行的精确应力估算。

著录项

来源
《Applied Physics Letters》 |2012年第24期|243511.1-243511.4|共4页
作者
Tetsuya Tada; Vladimir Poborchii; Toshihiko Kanayama;
展开▼
作者单位

Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan;

Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan;

National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. 3D TCAD simulations of strained Si CMOS devices with silicon-based alloy stressors and stressed CESL [J] . Wei-Ching Wang, Shu-Tong Chang, Jacky Huang, Solid-State Electronics . 2009,第8期

机译：带有硅基合金应力源和应力CESL的应变Si CMOS器件的3D TCAD模拟
2. Analysis of the Effect of TSV-Induced Stress on Devices Performance by Direct Strain and Electrical Measurements and FEA Simulations [J] . Armen Kteyan, Uwe Muehle, Martin Gall, IEEE transactions on device and materials reliability . 2017,第4期

机译：通过直接应变和电学测量以及FEA仿真分析TSV诱导的应力对器件性能的影响
3. Temperature distribution analysis of AlGaN/GaN HFETs operated around breakdown voltage using micro-Raman spectroscopy and device simulation [J] . Kenichi Kosaka, Tatsuya Fujishima, Kaoru Inoue, Physica Status Solidi. C, Conferences and critical reviews . 2007,第7期

机译：使用拉曼光谱和器件仿真分析在击穿电压附近工作的AlGaN / GaN HFET的温度分布
4. Investigation of local stress around TSVs by micro-Raman spectroscopy and finite element simulation [C] . Le Texier F., Mazuir J., Su-Yin M., 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization . 2011

机译：显微拉曼光谱和有限元模拟研究TSV周围的局部应力
5. Local fluid stress and nutrient transport effects via simulations of perfusion through bone tissue engineering scaffolds. [D] . Voronov, Roman. 2010

机译：通过模拟通过骨组织工程支架的灌注，局部流体压力和营养物质转运效应。
6. Effect of mitral annuloplasty device shape and size on leaflet and myofiber stress following repair of posterior leaflet prolapse: A patient-specific finite element simulation [O] . William G. Morrel, Liang Ge, Alison Ward, -1

机译：二尖瓣瓣环成形术的形状和大小对小叶后脱垂修复后小叶和肌纤维应力的影响：患者特定的有限元模拟
7. Device Simulation of Packaging-Stress Effects of Semiconductor Devices : Evaluation of the Impact of Stress Distribution in the Devices [O] . 吉田, 圭佑, 小金丸, 正明, 池田, 徹, 2011

机译：半导体器件的封装应力效应的器件仿真：器件中应力分布的影响评估
8. Development of Flight-by-Flight Fatigue Test Data from Statistical Distributions of Aircraft Stress Data. Volume II. Documentation of the B-58 and F-106 Fatigue Spectra Simulation Programs. [R] . Hill, M. C., Dillhoff, K. J. 1975

机译：从飞机应力数据统计分布开发飞行疲劳试验数据。第二卷。 B-58和F-106疲劳光谱模拟程序的文档。

Analysis of micro-Raman spectra combined with electromagnetic simulation and stress simulation for local stress distribution in Si devices

摘要

著录项

相似文献

相关主题

期刊订阅