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Influence of ultrathin amorphous silicon layers on the nucleation of microcrystalline silicon films under hydrogen plasma treatment

机译:氢等离子体处理超薄非晶硅层对微晶硅膜形核的影响

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摘要

Microstructures of phosphorus-doped hydrogenated microcrystalline silicon (μc-Si: H) thin films deposited by plasma-enhanced chemical vapor deposition are certainly dependent on the thickness of the H_2 plasma-treated amorphous silicon (a-Si:H) layers. An ultrathin H-treated a-Si:H layer is beneficial in obtaining a very thin μc-Si:H film with high conductivity. Experimental results indicate that H_2 plasma treatment induces the occurrence of high-pressure H_2 in microvoids and causes compressive stress inside the ultrathin a-Si:H layers, thereby enhancing the generation of strained Si-Si bonds and nucleation sites and consequently accelerating the nucleation of μc-Si:H films.
机译:通过等离子体增强化学气相沉积沉积的磷掺杂的氢化微晶硅(μc-Si:H)薄膜的微观结构当然取决于H_2等离子体处理的非晶硅(a-Si:H)层的厚度。经过超薄H处理的a-Si:H层有利于获得具有高导电性的非常薄的μc-Si:H膜。实验结果表明,H_2等离子体处理诱导了微孔中高压H_2的产生,并在超薄a-Si:H层内部产生了压应力,从而增强了应变Si-Si键和成核位点的生成,从而加速了Si-Si键的成核。 μc-Si:H膜。

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  • 来源
    《Applied Physics Letters》 |2011年第4期|p.041902.1-041902.3|共3页
  • 作者单位

    School of Electronic Science and Engineering, Key Laboratory of Photonic and Electronic Materials,Nanjing University, Nanjing 210093, People's Republic of China;

    School of Electronic Science and Engineering, Key Laboratory of Photonic and Electronic Materials,Nanjing University, Nanjing 210093, People's Republic of China;

    School of Electronic Science and Engineering, Key Laboratory of Photonic and Electronic Materials,Nanjing University, Nanjing 210093, People's Republic of China;

    School of Electronic Science and Engineering, Key Laboratory of Photonic and Electronic Materials,Nanjing University, Nanjing 210093, People's Republic of China;

    School of Electronic Science and Engineering, Key Laboratory of Photonic and Electronic Materials,Nanjing University, Nanjing 210093, People's Republic of China;

    School of Electronic Science and Engineering, Key Laboratory of Photonic and Electronic Materials,Nanjing University, Nanjing 210093, People's Republic of China;

    School of Electronic Science and Engineering, Key Laboratory of Photonic and Electronic Materials,Nanjing University, Nanjing 210093, People's Republic of China;

    School of Electronic Science and Engineering, Key Laboratory of Photonic and Electronic Materials,Nanjing University, Nanjing 210093, People's Republic of China;

    Beijing Synchrotron Radiation Laboratory, Institute of High Energy Physics, Beijing 100049,People's Republic of China;

    Beijing Synchrotron Radiation Laboratory, Institute of High Energy Physics, Beijing 100049,People's Republic of China;

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  • 正文语种 eng
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