On inhibiting Auger intraband relaxation in InAs/GaAs quantum dot intermediate band solar cells

Stanko Tomic; Antonio Marti; Elisa Antolfn; Antonio Luque

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On inhibiting Auger intraband relaxation in InAs/GaAs quantum dot intermediate band solar cells

机译：InAs / GaAs量子点中带太阳能电池中俄歇带内弛豫的抑制

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The operation of ideal quantum dot intermediate band solar cell requires the largest possible reduction of carrier relaxation from the conduction band to the intermediate band (intraband relaxation) so that it approaches the radiative limit. In this respect, we examine the contribution to this relaxation of Auger related electron cooling non-radiative mechanisms and suggest ways of suppressing them.

机译：理想的量子点中间带太阳能电池的操作需要最大程度地减少载流子从导带到中间带的弛豫（带内弛豫），使其接近辐射极限。在这方面，我们研究了俄歇相关的电子冷却非辐射机理对这种弛豫的贡献，并提出了抑制它们的方法。

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来源
《Applied Physics Letters》 |2011年第5期|p.053504.1-053504.3|共3页
作者
Stanko Tomic; Antonio Marti; Elisa Antolfn; Antonio Luque;
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作者单位

Joule Physics Laboratory, School of Computing, Science and Engineering, University of Salford,Salford M5 4WT, United Kingdom;

Instituto de Energia Solar, Universidad Politecnica de Madrid, Ciudad Universitaria sn, Madrid 28040,Spain;

Instituto de Energia Solar, Universidad Politecnica de Madrid, Ciudad Universitaria sn, Madrid 28040,Spain;

Instituto de Energia Solar, Universidad Politecnica de Madrid, Ciudad Universitaria sn, Madrid 28040,Spain;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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1. Saturable Two-Step Photocurrent Generation in Intermediate-Band Solar Cells Including InAs Quantum Dots Embedded in AlGaAs/GaAs Quantum Wells [J] . Asahi Shigeo, Teranishi Haruyuki, Kasamatsu Naofumi, Photovoltaics, IEEE Journal of . 2016,第2期

机译：包括嵌入AlGaAs / GaAs量子阱中的InAs量子点在内的中带太阳能电池中的饱和两步光电流产生
2. Stranski-Krastanov InAs/GaAsSb quantum dots coupled with sub-monolayer quantum dot stacks as a promising absorber for intermediate band solar cells [J] . Yeongho Kim, ll-Wook Cho, Mee-Yi Ryu, Applied Physics Letters . 2017,第7期

机译：Stranski-Krastanov InAs / GaAsSb量子点与亚单层量子点堆叠耦合，有望成为中带太阳能电池的吸收体
3. Physical insights into the effects of quantum dots size and temperature on efficiency of InAs/GaAs quantum dots intermediate band solar cell [J] . Physica, A. Statistical mechanics and its applications . 2020,第期

机译：对数量点尺寸和温度对INAS / GaAs量子点中间带太阳能电池效率影响的物理见解
4. INFLUENCE OF THE QUANTUM DOT CAPPING PROCEDURE ON THE DENSITY OF DEFECTS IN INAS/GAAS QUANTUM DOT INTERMEDIATE BAND SOLAR CELLS [C] . D. N. Micha, E. C. Weiner, R. Jakomin, European Photovoltaic Solar Energy Conference and Exhibition . 2016

机译：量子点覆盖程序对INAS / GaAs量子点中间带太阳能电池缺陷密度的影响
5. Fabrication and Characterization of Perovskite Solar Cell and Challenges to the Intermediate Band Concept in InAs/GaAs Quantum Dot Solar Cell [D] . Yao, Yangyi. 2019

机译：钙钛矿太阳能电池的制造与表征inaS / GaAs量子点太阳能电池中间带概念的挑战
6. Efficient two-step photocarrier generation in bias-controlled InAs/GaAs quantum dot superlattice intermediate-band solar cells [O] . T. Kada, S. Asahi, T. Kaizu, -1

机译：偏置控制的InAs / GaAs量子点超晶格中带太阳能电池中高效的两步光生载流子
7. On inhibiting Auger intraband relaxation in InAs/GaAs quantum dot intermediate band solar cells [O] . Tomic, S, Martí, A, Antolín, E, 2011

机译：InAs / GaAs量子点中带太阳能电池中俄歇带内弛豫的抑制

On inhibiting Auger intraband relaxation in InAs/GaAs quantum dot intermediate band solar cells

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