Correlation between symmetry-selective transport and spin-dependent resonant tunneling in fully epitaxial Cr/ultrathin-Fe/MgO/Fe(001) magnetic tunnel junctions

Tbmohiko Niizeki; Hiroaki Sukegawa; Seiji Mitani; Nobuki Tezuka; Koichiro Inomata

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Correlation between symmetry-selective transport and spin-dependent resonant tunneling in fully epitaxial Cr/ultrathin-Fe/MgO/Fe(001) magnetic tunnel junctions

机译：完全外延Cr / Ultrathin-Fe / MgO / Fe（001）磁性隧道结中对称选择性迁移与自旋相关的共振隧穿之间的相关性

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Spin-dependent resonant tunneling was investigated in fully epitaxial Cr(001)/ultrathin Fe(Ool)/ MgO(001)/Fe(001) pseudo double-barrier magnetic tunnel junctions (MTJs) by varying structural coherence of the MgO barrier through postdeposition annealing and Mg layer insertion. It was clearly demonstrated that not only the flatness of the Fe quantum-well layer, but also the structural coherence of the MgO barrier caused the appearance of sharp resonant conductance peaks which were not obtained for spin-dependent resonant tunneling in amorphous AlO-barrier MTJs. The symmetry-selective transport via MgO barrier plays a crucial role for the resonant tunneling as well as large tunneling magnetoresistance.

机译：通过在沉积后通过改变MgO势垒的结构相干性，在完全外延的Cr（001）/超铀Fe（Ool）/ MgO（001）/ Fe（001）伪双势垒磁性隧道结（MTJs）中研究了自旋依赖性共振隧穿退火和镁层插入。清楚地表明，不仅Fe量子阱层的平坦度，而且MgO势垒的结构相干性都导致出现尖锐的共振电导峰，而在非晶AlO势垒MTJ中，自旋相关的共振隧穿没有获得。通过MgO势垒的对称选择性传输对于共振隧穿以及较大的隧穿磁阻起着至关重要的作用。

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来源
《Applied Physics Letters》 |2011年第18期|p.182508.1-182508.3|共3页
作者
Tbmohiko Niizeki; Hiroaki Sukegawa; Seiji Mitani; Nobuki Tezuka; Koichiro Inomata;
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作者单位

National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan;

National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan;

National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan;

Department of Materials Science, Tohoku University, Aoba-yama 6-6-02, Sendai 980-8579, Japan;

National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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1. Spin-dependent tunneling in epitaxial Fe/Cr/MgO/Fe magnetic tunnel junctions with an ultrathin Cr(001) spacer layer [J] . Rie Matsumoto, Akio Fukushima, Kay Yakushiji, Physical review . 2009,第17期

机译：具有超薄Cr（001）间隔层的外延Fe / Cr / MgO / Fe磁性隧道结中的自旋依赖性隧穿
2. Strong quantum interference effect in fully epitaxial Cr/Fe/MgO/Fe magnetic tunnel junctions with ultrathin-Fe electrodes at room temperature [J] . Do Bang, T. Nozaki, Y. Suzuki Journal of Applied Physics . 2011,第7Pta3期

机译：室温下超薄铁电极的全外延Cr / Fe / MgO / Fe磁性隧道结中的强量子干扰效应
3. High bias voltage effect on spin-dependent conductivity and shot noise in carbon-doped Fe(001)/MgO(001)/Fe(001) magnetic tunnel junctions [J] . R. Guerrero, D. Herranz, F. G. Aliev, Applied Physics Letters . 2007,第13期

机译：高偏置电压对碳掺杂的Fe（001）/ MgO（001）/ Fe（001）磁性隧道结中自旋相关的电导率和散粒噪声的影响
4. Strong quantum interference effect in fully epitaxial Cr/Fe/MgO/Fe magnetic tunnel junctions with ultrathin-Fe electrodes at room temperature [C] . Do Bang, T. Nozaki, Y. Suzuki Annual Conference on Magnetism Magnetic Materials . 2011

机译：在室温下具有超薄-FE电极的完全外延Cr / Fe / MgO / Fe磁隧道结的强量子干扰效应
5. Spin-dependent transport in ferromagnetic oxide-based tunnel junctions. [D] . Noh, Jin-Seo. 2003

机译：基于铁磁氧化物的隧道结中的自旋依赖性传输。
6. Effect of MgO Underlying Layer on the Growth of GaOx Tunnel Barrier in Epitaxial Fe/GaOx/(MgO)/Fe Magnetic Tunnel Junction Structure [O] . Sai Krishna Narayananellore, Naoki Doko, Norihiro Matsuo, 2017

机译：MgO下层对外延Fe / GaOx /（MgO）/ Fe磁性隧道结结构中GaOx隧道势垒生长的影响
7. High Bias Voltage Effect on Spin-Dependent Conductivity and Shot Noise in Carbon-doped Fe(001)/MgO(001)/Fe(001) Magnetic Tunnel Junctions [O] . Guerrero, R., Herranz, D., Aliev, F. G., 2008

机译：高偏压对自旋相关电导率和散粒噪声的影响在碳掺杂Fe（001）/ mgO（001）/ Fe（001）磁隧道结中

Correlation between symmetry-selective transport and spin-dependent resonant tunneling in fully epitaxial Cr/ultrathin-Fe/MgO/Fe(001) magnetic tunnel junctions

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