Increased photoluminescence of strain-reduced, high-Sn composition Ge_(1-x) Sn_x alloys grown by molecular beam epitaxy

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• 来源
  《Applied Physics Letters》 |2011年第18期|p.181125.1-181125.3|共3页
• 作者

  Robert Chen; Hai Lin; Yijie Huo; Charles Hitzman; Theodore I. Kamins; James S. Harris;

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• 作者单位

  Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA;

  Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA;

  Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA;

  Stanford Nano Center (SNC), Stanford University, Stanford, California 94305, USA;

  Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA;

  Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA;

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• 正文语种 eng
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