Drift velocity peak and negative differential mobility in high field transport in graphene nanoribbons explained by numerical simulations

A. Betti; G. Fiori; G. lannaccone

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Drift velocity peak and negative differential mobility in high field transport in graphene nanoribbons explained by numerical simulations

机译：数值模拟解释了石墨烯纳米带中高场输运中的漂移峰和负微分迁移率

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We present numerical simulations of high field transport in both suspended and deposited armchair graphene nanoribbon (A-GNR) on HfO_2 substrate. Drift velocity in suspended GNR does not saturate at high electric field (F), but rather decreases, showing a maximum for F≈ 10kV/cm. Deposition on HfO_2 strongly degrades the drift velocity by up to a factor ≈10 with respect to suspended GNRs in the low-field regime, whereas at high fields, drift velocity approaches the intrinsic value expected in suspended GNRs. Even in the assumption of perfect edges, the obtained mobility is far behind what expected in two-dimensional graphene, and is further reduced by surface optical phonons.

机译：我们目前在HfO_2衬底上的悬浮和沉积扶手椅石墨烯纳米带（A-GNR）中的高场传输的数值模拟。悬浮GNR中的漂移速度不会在高电场（F）时达到饱和，而是降低，在F≈10kV/ cm时表现出最大值。在低场条件下，相对于悬浮GNR，在HfO_2上沉积会极大地使漂移速度降低≈10倍，而在高场下，漂移速度接近悬浮GNR中预期的固有值。即使在假设边缘完美的情况下，所获得的迁移率也远远落后于二维石墨烯所期望的迁移率，并且由于表面光学声子而进一步降低了迁移率。

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《Applied Physics Letters》 |2011年第24期|p.242108.1-242108.3|共3页
作者
A. Betti; G. Fiori; G. lannaccone;
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作者单位

Dipartimento di Ingegneria dell Informazione: Elettronica, Informatica, Telecomunicazioni,Universita di Pisa, Via Caruso 16,1-56122 Pisa, Italy;

Dipartimento di Ingegneria dell Informazione: Elettronica, Informatica, Telecomunicazioni,Universita di Pisa, Via Caruso 16,1-56122 Pisa, Italy;

Dipartimento di Ingegneria dell Informazione: Elettronica, Informatica, Telecomunicazioni,Universita di Pisa, Via Caruso 16,1-56122 Pisa, Italy;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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机译：数值模拟解释了石墨烯纳米带中高场输运中的漂移峰和负微分迁移率

Drift velocity peak and negative differential mobility in high field transport in graphene nanoribbons explained by numerical simulations

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