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首页> 外文期刊>Applied Physics Letters >Characterization and mechanism of He plasma pretreatment of nanoscale polymer masks for improved pattern transfer fidelity
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Characterization and mechanism of He plasma pretreatment of nanoscale polymer masks for improved pattern transfer fidelity

机译：纳米级聚合物掩膜氦等离子体预处理的特征及其机理，以提高图案转印的保真度

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摘要

Roughening of nanoscale polymer masks during plasma etching (PE) limits feature critical dimensions in current and future lithographic technologies. Roughness formation of 193 nm photoresist (PR) is mechanistically explained by plasma-induced changes in mechanical properties introduced at the PR surface (~2 nm) by ions and in parallel in the material bulk (~200 nm) by ultraviolet (UV) plasma radiation. Synergistic roughening of polymer masks can be prevented by pretreating PR patterns with a high dose of He plasma UV exposure to saturate bulk material modifications. During subsequent PE, PR patterns are stabilized and exhibit improved etch resistance and reduced surface/line-edge roughness.
机译：在当前和未来的光刻技术中，等离子刻蚀（PE）限制过程中纳米级聚合物掩模的粗糙化具有关键尺寸。 193 nm光刻胶（PR）的粗糙度形成可以通过等离子体诱导的离子在PR表面（〜2 nm）引入的机械性能变化以及通过紫外线（UV）等离子体在材料体积（〜200 nm）中并行引入的机械性能变化来解释辐射。聚合物掩模的协同粗糙化可以通过用高剂量He等离子体UV曝光预处理PR图样来饱和大块材料改性来防止。在随后的PE中，PR图案被稳定并表现出改善的抗蚀刻性和降低的表面/线条边缘粗糙度。

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  • 来源
    《Applied Physics Letters》 |2011年第26期|p.261501.1-261501.4|共4页
  • 作者

    F. Weilnboeck; D. Metzler; N. Kumar; G. S. Oehrlein; R. L. Bruce; S. Engelmann; N. Fuller;

  • 作者单位

    Department of Material Science and Engineering, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, USA;

    Department of Material Science and Engineering, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, USA;

    Department of Material Science and Engineering, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, USA;

    Department of Material Science and Engineering, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, USA;

    IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA;

    IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA;

    IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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