Ultrafast carrier mobilities in high-resistivity iron-doped Ga_(0.69)In_(0.31)As photoconducting antennas

Suranjana Sengupta; Ingrid Wilke; Partha. S. Dutta

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Ultrafast carrier mobilities in high-resistivity iron-doped Ga_(0.69)In_(0.31)As photoconducting antennas

机译：高阻铁掺杂Ga_（0.69）In_（0.31）As光电导天线中的超快载流子迁移率

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We report measurements of terahertz (THz) frequency radiation pulses emitted by photoconducting (PC) antennas fabricated from high-resistivity Fe-doped Ga_(0.69)In_(0.31)As. The Ga_(0.69)In_(0.31)As:Fe was grown using a hybrid vertical Bridgman and gradient freezing directional solidification process. Ga_xIn_(1-x)As crystals were uniformly doped with Fe atoms to obtain high-resistivity (～10~7 Ω cm). The ultrafast carrier mobility in this material is about three orders of magnitude higher than in Ga_xIn_(1-x)As thin films grown by molecular beam epitaxy. The bandgap of Ga_(0.69)In_(0.31)As: Fe is low enough (～ 1 eV) to use compact Yb-based multiwatt lasers operating at 1.1 μm for photoexcitation of Ga_(0.69)In_(0.31)As based PC antennas for high power THz emission.

机译：我们报告了由高电阻率掺铁Ga_（0.69）In_（0.31）As制成的光电导（PC）天线发射的太赫兹（THz）频率辐射脉冲的测量结果。 Ga_（0.69）In_（0.31）As：Fe使用混合垂直Bridgman和梯度冻结定向凝固工艺生长。 Ga_xIn_（1-x）As晶体均匀地掺杂有Fe原子，以获得高电阻率（〜10〜7Ωcm）。这种材料中超快的载流子迁移率比通过分子束外延生长的Ga_xIn_（1-x）As薄膜高大约三个数量级。 Ga_（0.69）In_（0.31）As：Fe的带隙足够低（〜1 eV），可以使用工作在1.1μm的紧凑型Yb基多瓦激光器对Ga_（0.69）In_（0.31）As基PC天线进行光激发。高功率太赫兹发射。

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《Applied Physicsletters》 |2009年第21期|211102.1-211102.3|共3页
作者
Suranjana Sengupta; Ingrid Wilke; Partha. S. Dutta;
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Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;

Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;

Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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机译：分子束外延法在梯度Inas_yp_（1-y）缓冲液上生长的In-（0.7）al_（0.3）As / in_（0.69）ga_（0.31）变质热光电器件
2. Sheet‐carrier density and Ⅰ‐Ⅴ analysis of In_(0.7)Ga_(0.3)As/InAs/In_(0.7)Ga_(0.3)As/InAs/In_(0.7)Ga_(0.3)As dual channel double gate HEMT for THz applications [J] . Poornachandran R., Mohankumar N., Kumar Saravana R., International journal of numerical modelling . 2019,第5期

机译：In_（0.7）Ga_（0.3）As / InAs / In_（0.7）Ga_（0.3）As / InAs / In_（0.7）Ga_（0.3）As双通道双栅极HEMT的薄层载流子密度和Ⅰ-Ⅴ分析应用领域
3. Sheet‐carrier density and Ⅰ‐Ⅴ analysis of In_(0.7)Ga_(0.3)As/InAs/In_(0.7)Ga_(0.3)As/InAs/In_(0.7)Ga_(0.3)As dual channel double gate HEMT for THz applications [J] . Poornachandran R., Mohankumar N., Kumar Saravana R., International journal of numerical modelling . 2019,第5期

机译：片载体密度和Ⅰ-ⅴIN_（0.7）GA_（0.3）的分析为/ INAS / IN_（0.7）GA_（0.3）为/ INAS / IN_（0.7）GA_（0.3）作为THZ的双通道双栅极HEMT应用程序
4. In_(0.5)Ga_(0.5)P/In_(0.2)Ga_(0.8)As Dual Gate Pseudomorphic High Electron Mobility Transistors [C] . W.-S. Lour, M.-K. Tsai, K.-C. Chen, International Symposium on State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS 35), Sep 2-9, 2001, San Francisco, CA . 2001

机译：In_（0.5）Ga_（0.5）P / In_（0.2）Ga_（0.8）As双栅极伪高电子迁移率晶体管
5. Characterization of terahertz emission from high resistivity iron-doped bulk gallium indium arsenide based photoconducting antennas excited at 800 nm. [D] . Sengupta, Suranjana. 2009

机译：表征在800 nm激发的高电阻率铁掺杂块状砷化镓铟基光电导天线的太赫兹发射特性。
6. Ultrafast carrier relaxation in GaN, In_(0.05)Ga_(0.95)N and an In_(0.05)Ga_(0.95)/In_(0.15)Ga_(0.85)N Multiple Quantum Well [O] . Ozgur, Umit, Everitt, Henry O. 2002

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Ultrafast carrier mobilities in high-resistivity iron-doped Ga_(0.69)In_(0.31)As photoconducting antennas

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