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首页> 外文学位 >Characterization of terahertz emission from high resistivity iron-doped bulk gallium indium arsenide based photoconducting antennas excited at 800 nm.
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Characterization of terahertz emission from high resistivity iron-doped bulk gallium indium arsenide based photoconducting antennas excited at 800 nm.

机译：表征在800 nm激发的高电阻率铁掺杂块状砷化镓铟基光电导天线的太赫兹发射特性。

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摘要

In this dissertation we investigate pulsed terahertz (THz) emission characteristics of semi-large aperture photoconducting (PC) antennas fabricated on Fe-doped bulk Ga0.69In0.31As substrate. The research is aimed at evaluating the impact of physical properties of a semi-large aperture Ga 0.69In0.31As PC antenna upon its THz generation efficiency, and is motivated by the ultimate goal of developing a pulsed THz radiation source with MHz repetition rates, capable of operating at wavelengths between 1--1.5 mum, and having an average output power of 1mW.;The bulk Ga0.69In0.31As crystals employed in this dissertation were grown using a hybrid vertical Bridgman and gradient freezing directional solidification process. The crystals were uniformly doped with Fe atoms to obtain high resistivity ∼ 107 O. The carrier lifetimes in bulk Ga0.69In0.31As crystals estimated using transient photoreflectivity measurements is in the subpicosecond range. The ultrafast carrier mobility in this material, estimated from THz emission measurements in about two orders of magnitude higher than that reported in GaxIn1-xAs thin films grown by molecular beam epitaxy. The high ultrafast carrier mobility along with high resistivity and subpicosecond carrier lifetimes make Ga0.69In0.31As an excellent candidate for semi-large aperture PC antenna based THz emitter. Further, the band gap of Ga0.69In0.31As is low enough (∼ 1 eV), thus making it possible to use compact Yb-based multiwatt laser systems operating at 1.1 mum for photoexcitation of Ga0.69In0.31As based PC antennas for high power THz emission.;Our simulations based on experimental results of THz emission from Ga 0.69In0.31As PC antenna (photoexcited at 810 nm) predict that an output THz power of 51 muW can be extracted from a semi-large Ga 0.69In0.31As PC antenna with electrode gap spacing of 0.8 mm when it is operated with an external bias voltage of 11.5 kV/cm and photoexcited with 1 W of incident laser power (obtained from a Yb:KYW laser). This result is promising in that it is a factor of ten within the range of half a milliwatt of output THz power, and is about two orders of magnitude higher than the output of an InAs crystal which is a commonly used emitter in most THz time-domain spectroscopy systems.
机译：在本文中，我们研究了在掺铁的块体Ga0.69In0.31As衬底上制备的半大孔径光导（PC）天线的脉冲太赫兹（THz）发射特性。该研究旨在评估半大孔径Ga 0.69In0.31As PC天线的物理特性对其THz产生效率的影响，其最终目的是开发具有MHz重复频率的脉冲THz辐射源，其能力波长为1--1.5微米，平均输出功率为1毫瓦。本论文中使用的Ga0.69In0.31As块状晶体是采用垂直立式Bridgman混合和梯度凝固定向凝固工艺生长的。晶体均匀地掺杂有Fe原子，以获得约107 O的高电阻率。使用暂态光反射率测量估计的Ga0.69In0.31As块体的载流子寿命在亚皮秒范围内。根据THz发射测量结果，该材料中的超快载流子迁移率比分子束外延生长的GaxIn1-xAs薄膜报道的迁移率高大约两个数量级。高超快的载流子迁移率以及高电阻率和亚皮秒的载流子寿命使Ga0.69In0.31成为基于半大口径PC天线的THz发射器的极佳候选者。此外，Ga0.69In0.31As的带隙足够低（〜1 eV），因此可以使用工作在1.1微米的紧凑型基于Yb的多瓦激光系统对基于Ga0.69In0.31As的PC天线进行光激发，以获得较高的增益。我们基于Ga 0.69In0.31As PC天线（在810 nm处受光）的THz发射的实验结果进行的模拟预测，可以从半大型Ga 0.69In0.31As中提取51μW的输出THz功率当PC天线在11.5 kV / cm的外部偏置电压下工作并被1 W的入射激光功率（从Yb：KYW激光器获得）光激发时，电极间隙间距为0.8 mm。该结果令人鼓舞，因为它在输出THz功率的半毫瓦范围内是十分之一，比InAs晶体的输出高大约两个数量级，InAs晶体在大多数THz时间内都是常用的发射器，域光谱系统。

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  • 作者

    Sengupta, Suranjana.;

  • 作者单位

    Rensselaer Polytechnic Institute.;

  • 授予单位 Rensselaer Polytechnic Institute.;
  • 学科 Physics Condensed Matter.;Physics Optics.
  • 学位 Ph.D.
  • 年度 2009
  • 页码 97 p.
  • 总页数 97
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 光学;
  • 关键词

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