N_2o-grown Oxides/4h-sic (0001), (0338), And (1120) Interface Properties Characterized By Using P-type Gate-controlled Diodes

Masato Noborio; Jun Suda; Tsunenobu Kimoto

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N_2o-grown Oxides/4h-sic (0001), (0338), And (1120) Interface Properties Characterized By Using P-type Gate-controlled Diodes

机译：使用P型栅极控制二极管表征的N_2o生长氧化物/ 4h-sic（0001），（0338）和（1120）界面特性

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The N_2O-grown SiO_2/4H-SiC (0001), (0338), and (1120) interface properties in p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been characterized by using gate-controlled diodes. Although the inversion layer is not formed in simple SiC MOS capacitors at room temperature due to its large bandgap, a standard low frequency capacitance-voltage (C-V) curve can be obtained for the gate-controlled diodes, owing to the supply of minority carriers from the source region. From the quasistatic C-V curves measured by using gate-controlled diodes, the interface state density has been evaluated by an original method proposed in this study. The interface state density near the valence band edge evaluated by the method is the lowest at the oxides/4H-SiC (0338) interface. Comparison with the channel mobility is also discussed.

机译：通过使用栅极控制二极管来表征p沟道金属氧化物半导体场效应晶体管（MOSFET）中N_2O生长的SiO_2 / 4H-SiC（0001），（0338）和（1120）的界面特性。尽管由于其较大的带隙，在室温下未在简单的SiC MOS电容器中形成反型层，但由于可提供少数载流子，因此可为栅极控制二极管获得标准的低频电容-电压（CV）曲线源区域。从使用栅极控制二极管测得的准静态C-V曲线，已使用本研究提出的原始方法评估了界面态密度。通过该方法评估的价带边缘附近的界面态密度在氧化物/ 4H-SiC（0338）界面处最低。还讨论了与信道迁移率的比较。

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来源
《Applied Physicsletters》 |2008年第19期|369-371|共3页
作者
Masato Noborio; Jun Suda; Tsunenobu Kimoto;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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1. Interface state density of SiO_2/p-type 4H-SiC (0001), (1120), (1100) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes [J] . Takuma Kobayashi, Seiya Nakazawa, Takafumi Okuda, Applied Physics Letters . 2016,第15期

机译：以低温亚阈值斜率为特征的SiO_2 / p型4H-SiC（0001），（1120），（1100）金属氧化物半导体结构的界面态密度
2. Interface Properties of Metal-Oxide-Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N_2O Oxidation [J] . Tsunenobu KIMOTO, Yosuke KANZAKI, Masato NOBORIO, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2005,第3期

机译：N_2O氧化形成的4H-SiC {0001}和（1120）上的金属氧化物半导体结构的界面特性
3. Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H-SiC at the oxide/(1120) 4H-SiC interface [J] . S. Dhar, Y. W. Song, L. C. Feldman, Applied Physics Letters . 2004,第9期

机译：一氧化氮退火对氧化物/（1120）4H-SiC界面处4H-SiC导带附近的界面陷阱密度的影响
4. A comparison between SiO_2/4H-SiC interface traps on (0001) and (1120) faces [C] . H. OE. Olafsson, C. Hallin, E. OE. Sveinbjoernsson International Conference on Silicon Carbide and Related Materials 2003 pt.2(ICSCRM 2003); 20031005-20031010; Lyon; FR . 2003

机译：（0001）和（1120）面上的SiO_2 / 4H-SiC界面陷阱的比较
5. Electrical, chemical, and structural characterization of the interface formed between nickel/gold and palladium/gold ohmic contacts and cleaned p-type gallium nitride (0001) surfaces. [D] . Hartlieb, Philip John. 2002

机译：镍/金和钯/金欧姆接触与清洁的p型氮化镓（0001）表面之间形成的界面的电，化学和结构表征。
6. Influence of Graphite Layer on Electronic Properties of MgO/6H-SiC(0001) Interface [O] . Rafał Lewandków, Piotr Mazur, Artur Trembułowicz, 2021

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7. N2O-grown oxides/4H-SiC (0001), (0338), and (1120) interface properties characterized by using p-type gate-controlled diodes [O] . Noborio Masato, Suda Jun, Kimoto Tsunenobu 2008

机译：N2O生长的氧化物/ 4H-SiC（0001），（0338）和（1120）的界面特性，其特征在于使用p型栅极控制二极管

N_2o-grown Oxides/4h-sic (0001), (0338), And (1120) Interface Properties Characterized By Using P-type Gate-controlled Diodes

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