Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures

E. J. R. Oliveira; A. T. da Cunha Lima; M. A. Boselli; G. M. Sipahi; S. C. P. Rodrigues; I. C. da Cunha Lima

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Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures

机译：铁磁多层半导体纳米结构中的自旋极化输运

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摘要

The occurrence of inhomogeneous spin-density distribution in multilayered ferromagnetic diluted magnetic semiconductor nanostructures leads to strong dependence of the spin-polarized transport properties on these systems. The spin-dependent mobility, conductivity, and resistivity in (Ga,Mn)As/GaAs, (Ga,Mn)N/GaN, and (Si,Mn)/Si multilayers are calculated as a function of temperature, scaled by the average magnetization of the diluted magnetic semiconductor layers. An increase of the resistivity near the transition temperature is obtained. The authors observed that the spin-polarized transport properties change strongly among the three materials.

机译：多层铁磁稀磁半导体纳米结构中不均匀的自旋密度分布的出现导致自旋极化传输特性对这些系统的强烈依赖性。根据温度计算在（Ga，Mn）As / GaAs，（Ga，Mn）N / GaN和（Si，Mn）/ Si多层膜中自旋相关的迁移率，电导率和电阻率，并根据平均值进行换算稀释的磁性半导体层的磁化。获得了转变温度附近的电阻率的增加。作者观察到，自旋极化的传输性质在这三种材料中变化很大。

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来源
《Applied Physics Letters》 |2007年第11期|p.112102.1-112102.3|共3页
作者
E. J. R. Oliveira; A. T. da Cunha Lima; M. A. Boselli; G. M. Sipahi; S. C. P. Rodrigues; I. C. da Cunha Lima;
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作者单位

Instituto de Fisica, Universidade do Estado do Rio de Janeiro, 20.500-013 Rio de Janeiro, Rio de Janeiro, Brazil;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类应用物理学;计量学;
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Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures

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