Molecular-nanolayer-induced suppression of in-plane Cu transport at Cu-silica interfaces

D. D. Gandhi; P. G. Ganesan; V. Chandrasekar; Z. Gan; S. G. Mhaisalkar; H. Li; G. Ramanath

首页> 外文期刊>Applied Physics Letters >Molecular-nanolayer-induced suppression of in-plane Cu transport at Cu-silica interfaces

【24h】

Molecular-nanolayer-induced suppression of in-plane Cu transport at Cu-silica interfaces

机译：分子纳米层诱导的铜-硅界面平面内铜传输的抑制

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Recent reports have shown that molecular nanolayers (MNLs) can be used to inhibit Cu diffusion across Cu-dielectric interfaces in nanodevice wiring. Here, we demonstrate that MNLs can curtail in-plane interfacial Cu transport. Cu lines embedded in SiO_2 in interdigitated comb configurations were passivated by organosilane MNLs with thiol, amino-phenyl, and amino-propyl termini. Leakage current and breakdown voltage measurements at 0-1.4 MV/cm electric fields reveal that amino-phenyl-terminated MNLs are the most effective in inhibiting in-plane leakage, likely due to Cu-N complex formation. Our results suggest that MNLs with appropriate termini could be used to tailor the stability and reliability of device wiring structures.

机译：最近的报告表明，分子纳米层（MNL）可用于抑制Cu扩散穿过纳米器件布线中的Cu介电界面。在这里，我们证明了MNL可以减少平面内界面Cu的运输。以叉状梳状嵌入SiO_2的Cu线被具有硫醇，氨基-苯基和氨基-丙基末端的有机硅烷MNL钝化。在0-1.4 MV / cm电场下的泄漏电流和击穿电压测量结果表明，可能由于Cu-N络合物的形成，氨基苯基末端的MNL最有效地抑制了面内泄漏。我们的结果表明，带有适当末端的MNL可用于定制设备布线结构的稳定性和可靠性。

著录项

来源
《Applied Physics Letters》 |2007年第16期|p.163507.1-163507.3|共3页
作者
D. D. Gandhi; P. G. Ganesan; V. Chandrasekar; Z. Gan; S. G. Mhaisalkar; H. Li; G. Ramanath;
展开▼
作者单位

Materials Science and Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类应用物理学;计量学;
关键词

相似文献

外文文献
中文文献
专利

1. Copper diffusion and mechanical toughness at Cu-silica interfaces glued with polyelectrolyte nanolayers [J] . D. D. Gandhi, A. P. Singh, M. Lane, Journal of Applied Physics . 2007,第8期

机译：聚电解质纳米层粘合的铜-二氧化硅界面处的铜扩散和机械韧性
2. Ultraviolet-oxidized mercaptan-terminated organosilane nanolayers as diffusion barriers at Cu-silica interfaces [J] . D. D. Gandhi, U. Tisch, B. Singh, Applied Physics Letters . 2007,第14期

机译：紫外线氧化的硫醇封端的有机硅烷纳米层作为铜-二氧化硅界面的扩散阻挡层
3. Controllable Interface Junction, In-Plane Heterostructures Capable of Mechanically Mediating On-Demand Asymmetry of Thermal Transports [J] . Gao Yuan, Xu Baoxing ACS applied materials & interfaces . 2017,第39期

机译：可控界面结，在平面内异质结构能够机械介导热输送的按需不对称性
4. A Monte Carlo simulation of electron transport in Cu nano-interconnects: Suppression of resistance degradation due to LER/LWR [C] . Kurusu Takashi, Tanimoto Hiroyoshi, Wada Makoto, IEEE International Electron Devices Meeting . 2012

机译：铜纳米互连体中电子传输的蒙特卡洛模拟：抑制因LER / LWR引起的电阻退化
5. Cu-Silica Based Programmable Metallization Cell: Fabrication, Characterization and Applications [D] . Chen, Wenhao. 2017

机译：铜硅基可编程金属化电池的制备，表征和应用
6. Mechanism of Cu+-transporting ATPases: Soluble Cu+ chaperones directly transfer Cu+ to transmembrane transport sites [O] . Manuel González-Guerrero, José M. Argüello 2008

机译：Cu +转运ATPase的机制：可溶性Cu +分子伴侣直接将Cu +转运到跨膜转运位点
7. Semiclassical theory of anisotropic transport at LaAlO3/SrTiO3 interfaces under in-plane magnetic field [O] . Bovenzi, N., Diez, M. 2017

机译：LaalO3 / srTiO3各向异性传输的半经典理论面内磁场下的界面

Molecular-nanolayer-induced suppression of in-plane Cu transport at Cu-silica interfaces

摘要

著录项

相似文献

相关主题

期刊订阅