Zn and ZnO nanoparticles fabricated by ion implantation combined with thermal oxidation, and the defect-free luminescence

H. Amekura; N. Umeda; Y. Sakuma; O. A. Plaksin; Y. Takeda; N. Kishimoto; Ch. Buchal

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Zn and ZnO nanoparticles fabricated by ion implantation combined with thermal oxidation, and the defect-free luminescence

机译：离子注入结合热氧化制备的Zn和ZnO纳米粒子，无缺陷发光

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Silica glass implanted with Zn ions of 60 keV to 1.0 X 10~(17) ions/cm~2 was annealed in oxygen gas to form ZnO nanoparticles (NPs). In as-implanted state, the implanted Zn atoms form Zn metallic NPs inside of the silica. After annealing at 600 ℃, ZnO NPs form on the surface, while Zn metallic NPs still remain in the deep region. At 700 ℃, most of Zn atoms move to the surface to form the droplet-shaped ZnO NPs which show two photoluminescence bands, i.e., an exciton band at 375 nm and a defect band at ～500 nm. The defect band almost disappears in the samples annealed at 600 ℃, which include both ZnO NPs and Zn NPs.

机译：在氧气中退火注入60 keV到1.0 X 10〜（17）离子/ cm〜2的Zn离子的石英玻璃，以形成ZnO纳米粒子（NPs）。在注入状态下，注入的Zn原子在二氧化硅内部形成Zn金属NP。经过600℃退火后，ZnO NPs在表面形成，而Zn金属NPs仍保留在较深的区域。在700℃时，大部分的Zn原子移动到表面，形成了液滴状的ZnO NPs，具有两个光致发光带，即375 nm的激子带和〜500 nm的缺陷带。在600℃退火的样品中，ZnO NPs和Zn NPs的缺陷带几乎消失。

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来源
《Applied Physics Letters》 |2006年第15期|p.153119.1-153119.3|共3页
作者
H. Amekura; N. Umeda; Y. Sakuma; O. A. Plaksin; Y. Takeda; N. Kishimoto; Ch. Buchal;
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作者单位

Nanomaterials Laboratory, National Institute for Materials Science (NIMS), 3-13 Sakura, Tsukuba, Ibaraki 305-0003, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类应用物理学;计量学;
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1. Defect-band-free luminescence from ZnO nanoparticles fabricated by ion implantation and thermal oxidation [J] . H. Amekura, Y. Sakuma, M. Yoshitake, Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2007,第Apr期

机译：通过离子注入和热氧化制备的ZnO纳米粒子的无缺陷带发光
2. Luminescence from ZnO nanoparticles/SiO2 fabricated by ion implantation and thermal oxidation [J] . Amekura H, Sakuma Y, Kono K, Physica, B. Condensed Matter . 2006,第0期

机译：离子注入和热氧化制备的ZnO纳米颗粒/ SiO2的发光
3. (101)-oriented ZnO nanoparticles fabricated in Si (100) by Zn ion implantation and thermal oxidation [J] . Y.Y. Shen, X.D. Zhang, D.C. Zhang, Materials Letters . 2011,第21a22期

机译：（101）取向的ZnO纳米颗粒通过Zn离子注入和热氧化在Si（100）中制备
4. Luminescence from ZnO nanoparticles/SiO_2 fabricated by ion implantation and thermal oxidation [C] . H. Amekura, Y. Sakuma, K. Kono, International Conference on Defects in Semiconductors . 2006

机译：通过离子注入和热氧化制造的ZnO纳米颗粒/ SiO_2的发光
5. Fabrication and Characterization of Defect-Free UV-Emitting ZnO Nanoparticles. [D] . Micheroni, Daniel Charles. 2013

机译：无缺陷紫外发光ZnO纳米粒子的制备与表征。
6. Temperature-Dependent Photoluminescence Property of Self-Assembly ZnO Nanowires via Chemical Vapor Deposition Combined with Hydrothermal Pretreatment [O] . Zongxiao Li, Xiangli Liu 2015

机译：化学气相沉积与水热预处理相结合的自组装ZnO纳米线的温度依赖性光致发光性质
7. Zn and ZnO nanoparticles fabricated by ion implantation combined with thermal oxidation, and the defect-free luminescence [O] . Amekura, H., Umeda, N., Sakuma, Y., 2006

机译：离子注入结合热氧化制备的Zn和ZnO纳米粒子，无缺陷发光
8. Photoluminescence spectroscopy and Rutherford backscattering channeling evaluation of various capping techniques for rapid thermal annealing of ion-implanted ZnSe [R] . Allen, E. L. , Zach, F. X. , Yu, K. M. , 1994

机译：离子注入Znse快速热退火的各种加帽技术的光致发光光谱和卢瑟福背散射通道评价

Zn and ZnO nanoparticles fabricated by ion implantation combined with thermal oxidation, and the defect-free luminescence

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