Current conduction mechanisms in post-nitridation rapid-thermal-annealed gate oxides on 4H silicon carbide

Kuan Yew Cheong; Wook Bahng; Nam-Kyun Kim

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Current conduction mechanisms in post-nitridation rapid-thermal-annealed gate oxides on 4H silicon carbide

机译：4H碳化硅上氮化后快速热退火栅氧化物中的电流传导机理

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In this letter we report current-conduction mechanisms in nitrided gate oxides on n-type 4H SiC subjected to various rapid-thermal-annealing temperatures. The experimental results show that by increasing SiC-SiO_2 interface trap density, current conduction in the oxide is increased. Fowler-Nordheim (FN) tunneling which is assisted by SiC-SiO_2 interface trap is responsible to the current conduction. In contrast, the current conduction through the oxide is significantly reduced when the oxide is having a multiple discrete energy level of electron trap center. This center enables trapping of electrons that are injected from SiC substrate via FN tunneling, causing a reduction in leakage current and an improvement in oxide breakdown strength. Based on the results, a model has been hypothesized and reasons for these observations have been presented.

机译：在这封信中，我们报告了经受各种快速热退火温度的n型4H SiC上氮化氮化栅氧化物中的电流传导机理。实验结果表明，通过增加SiC-SiO_2界面陷阱的密度，可以增加氧化物中的电流传导。 SiC-SiO_2界面陷阱辅助的Fowler-Nordheim（FN）隧穿负责电流的传导。相反，当氧化物具有电子阱中心的多个离散能级时，通过氧化物的电流传导显着减少。该中心能够捕获通过FN隧道从SiC衬底注入的电子，从而降低漏电流并提高氧化物击穿强度。根据结果，假设了一个模型，并提出了这些观察结果的原因。

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来源
《Applied Physics Letters》 |2005年第21期|p.212102.1-212102.3|共3页
作者
Kuan Yew Cheong; Wook Bahng; Nam-Kyun Kim;
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作者单位

School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类应用物理学;计量学;
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Current conduction mechanisms in post-nitridation rapid-thermal-annealed gate oxides on 4H silicon carbide

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