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首页> 外文期刊>Applied Physics Letters >Influence of Al doping on lattice strain and electrical properties of epitaxial GaN films grown by metalorganic chemical vapor deposition on Al_(2)O_(3) substrate
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Influence of Al doping on lattice strain and electrical properties of epitaxial GaN films grown by metalorganic chemical vapor deposition on Al_(2)O_(3) substrate

机译：Al掺杂对Al_（2）O_（3）衬底上有机金属化学气相沉积生长外延GaN薄膜的晶格应变和电性能的影响

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摘要

The effects of the isoelectronic Al doping of epitaxial GaN films grown by metalorganic chemical vapor deposition on a (0001) Al_(2)O_(3) single crystal substrate were investigated. It was found that the threading screw and edge dislocation densities of the GaN film decreased to less than half of that of the undoped GaN film up to Al doping concentration of 0.45%. The in-plane and out-of-plane strains were simultaneously reduced with the decrease in dislocation density as a result of the solution hardening effect. Accordingly, the electron mobility of the 0.45% Al-doped GaN film (524 cm~(2)/Vs) was greatly improved compared to that of the undoped GaN film (178 cm~(2)/Vs). However, the threading dislocation densities and strains were increased at a 0.64% Al concentration, and the electron mobility decreased accordingly. Therefore, the improvement in the electron mobility by Al doping up to 0.45% is the result of a decrease in the threading dislocation density and not a decrease in the number of point defects (Ga-site vacancy) as suggested earlier [Lee et al., Appl. Phys. Lett. 83, 917 (2003)].
机译：研究了通过金属有机化学气相沉积在（0001）Al_（2）O_（3）单晶衬底上生长的外延GaN薄膜的等电子Al掺杂的影响。发现在Al掺杂浓度为0.45％的情况下，GaN膜的螺纹螺钉和边缘位错密度降低到小于未掺杂GaN膜的螺钉和边缘位错密度的一半。由于固溶硬化作用，面内和面外应变同时降低，位错密度降低。因此，与未掺杂的GaN膜的电子迁移率（178cm·（2）/ Vs）相比，0.45％的Al掺杂的GaN膜的电子迁移率（524cm·（2）/ Vs）大大提高。然而，在0.64％的Al浓度下，线错位密度和应变增加，并且电子迁移率相应地降低。因此，Al掺杂提高到0.45％可以提高电子迁移率，这是因为线位错密度降低了，而不是点缺陷数（Ga位置空位）减少了（Lee等人，2006年）。 ，应用物理来吧83，917（2003）]。

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