...
首页> 外文期刊>Applied Physics Letters >Dielectric nonlinear characteristics of Ba(Zr_(0.35)Ti_(0.65))O_(3) thin films grown by a sol-gel process
【24h】

Dielectric nonlinear characteristics of Ba(Zr_(0.35)Ti_(0.65))O_(3) thin films grown by a sol-gel process

机译:溶胶-凝胶法生长Ba(Zr_(0.35)Ti_(0.65))O_(3)薄膜的介电非线性特性

获取原文
获取原文并翻译 | 示例
           

摘要

Ba(Zr_(0.35)Ti_(0.65))O_(3) (BZT) thin films were deposited via a sol-gel process on Pt-coated silicon substrates. The BZT films were in the perovskite phase and had polycrystalline structure. Temperature-dependent dielectric measurements revealed that the thin films have relaxor behavior and diffuse phase transition characteristics. The tunability K of the dielectric constant (at 600 kV/cm) is about 40% in the temperature range of 179-293 K. The improved temperature stability from this BZT thin film is beneficial to applications requiring a wide range of operating temperatures, thereby eliminating the need for environmental controls. Although the K value is not extraordinarily large compared to (Ba,Sr)TiO_(3), the low dielectric constant of BZT is attractive for microwave frequency applications. This provides an additional possibility in balancing K and dielectric constant through materials engineering for optimum device performance.
机译:Ba(Zr_(0.35)Ti_(0.65))O_(3)(BZT)薄膜通过溶胶-凝胶工艺沉积在涂有Pt的硅基板上。 BZT膜处于钙钛矿相并具有多晶结构。与温度有关的电介质测量表明,薄膜具有弛豫特性和扩散相变特性。在179-293 K的温度范围内,介电常数的可调性K(在600 kV / cm时)约为40%。这种BZT薄膜改善的温度稳定性有利于需要宽工作温度范围的应用,因此消除了环境控制的需要。尽管与(Ba,Sr)TiO_(3)相比K值不是特别大,但是BZT的低介电常数对微波频率应用很有吸引力。通过材料工程,这为平衡K和介电常数提供了另一种可能性,以实现最佳的器件性能。

著录项

  • 来源
    《Applied Physics Letters》 |2004年第16期|p.3136-3138|共3页
  • 作者单位

    Functional Materials Research Laboratory, Tongji University, Shanghai 200092, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用物理学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号