Repeatable asymmetric resonant tunneling in AlGaN/GaN double barrier structures grown on sapphire

Wang D.; Chen Z. Y.; Wang T.; Yang L. Y.; Sheng B. W.; Liu H. P.; Su J.; Wang P.; Rong X.; Cheng J. Y.; Shi X. Y.; Tan W.; Guo S. P.; Zhang J.; Ge W. K.; Shen B.; Wang X. Q.

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Repeatable asymmetric resonant tunneling in AlGaN/GaN double barrier structures grown on sapphire

机译：蓝宝石上生长的AlGaN / GaN双势垒结构中的可重复不对称共振隧穿

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We report repeatable AlGaN/GaN resonant tunneling diodes (RTDs) grown on a sapphire substrate by metal organic chemical vapor deposition. The RTDs exhibit clear negative differential resistance at low temperature in both bias directions. Peak-to-valley current ratios of 1.4 and 1.08 and peak current densities of 6 kA/cm(2) and 0.65 kA/cm(2) are extracted at 6.5 K for forward and reverse bias, respectively. The polarization fields in III-nitrides are found to affect the diode electrical behaviors by modulating the symmetry of the two barriers and altering the thickness of the depletion region, which eventually triggers asymmetric resonant tunneling transport. Published under license by AIP Publishing.

机译：我们报告通过金属有机化学气相沉积法在蓝宝石衬底上生长的可重复AlGaN / GaN共振隧穿二极管（RTD）。 RTD在低温下在两个偏置方向上均表现出明显的负差分电阻。分别以6.5 K提取正向和反向偏置的峰谷电流比1.4和1.08以及峰值电流密度6 kA / cm（2）和0.65 kA / cm（2）。发现III族氮化物中的极化场通过调制两个势垒的对称性并改变耗尽区的厚度来影响二极管的电学行为，这最终触发了非对称谐振隧道传输。由AIP Publishing授权发布。

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来源
《Applied Physics Letters》 |2019年第7期|073503.1-073503.5|共5页
作者
Wang D.; Chen Z. Y.; Wang T.; Yang L. Y.; Sheng B. W.; Liu H. P.; Su J.; Wang P.; Rong X.; Cheng J. Y.; Shi X. Y.; Tan W.; Guo S. P.; Zhang J.; Ge W. K.; Shen B.; Wang X. Q.;
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作者单位

Tsinghua Univ, Dept Engn Phys, Beijing 100084, Peoples R China|Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China|China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610200, Sichuan, Peoples R China;

Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China;

Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China|Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China;

Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China;

Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China;

Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China;

China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610200, Sichuan, Peoples R China;

Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China;

Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China;

Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China;

China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610200, Sichuan, Peoples R China;

China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610200, Sichuan, Peoples R China;

Adv Microfabricat Equipment Inc, Shanghai 201201, Peoples R China;

China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610200, Sichuan, Peoples R China;

Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China;

Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China|Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China;

Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China|Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China;

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专利

1. Modeling and optimization of a double-well double-barrier GaN/AlGaN/GaN/AlGaN resonant tunneling diode [J] . Yang Liu, Bo Gao, Min Gong, Journal of Applied Physics . 2017,第21期

机译：双阱双势垒GaN / AlGaN / GaN / AlGaN共振隧穿二极管的建模和优化
2. 930 kA/cm~2 peak tunneling current density in GaN/AIN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template [J] . Growden Tyler A., Cornuelle Evan M., Storm David F., Applied Physics Letters . 2019,第20期

机译：在MOCVD蓝宝石上的GaN模板上生长的GaN / AIN谐振隧穿二极管中的930 kA / cm〜2峰值隧穿电流密度
3. 930 kA/cm~2 peak tunneling current density in GaN/AIN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template [J] . Growden Tyler A., Cornuelle Evan M., Storm David F., Applied Physics Letters . 2019,第20期

机译：930 ka / cm〜2峰隧道隧道隧道电流密度在Mocvd Gan-On-Sapphire模板上种植的甘克/ AIN共振隧道二极管
4. Tunneling in dislocation-free GaN/AlGaN double-barrier diodes grown on bulk GaN [C] . S. Golka, G. Pozzovivo, W. Schrenk, International Conference on the Physics of Semiconductors . 2007

机译：在散装GaN上种植的不脱位GaN / AlGaN双屏障二极管隧道
5. Al-Rich AlGaN/AlN-Based Double Barrier Resonant Tunneling Diodes [D] . Washiyama, Shun. 2018

机译：基于AL的ALGAN / ALN的双屏障共振隧道二极管
6. Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate [O] . Kexiong Zhang, Hongwei Liang, Yang Liu, -1

机译：金属有机化学气相沉积在蓝宝石衬底上生长的低Al成分p-GaN / Mg掺杂Al0.25Ga0.75N / n + -GaN极化诱导的反向隧穿结
7. Coherent and Phonon-assisted Tunnelling in Asymmetric Double Barrier Resonant Tunnelling Structures ∗ [O] . Jun-jie Shi, Ers A, Shao-hua Pan A, 2013

机译：非对称双势垒共振隧穿结构中的相干和声子辅助隧穿
8. Piezoelectric effects in double barrier resonant tunneling structures [R] . Cong, L. , Albrecht, J. D. , Nathan, M. I. , 1994

机译：双势垒共振隧穿结构中的压电效应

Repeatable asymmetric resonant tunneling in AlGaN/GaN double barrier structures grown on sapphire

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