On the origin of contact resistances in graphene devices fabricated by optical lithography

Carlos Alvarado Chavarin; Abhay A. Sagade; Daniel Neumaier; Gerd Bacher; Wolfgang Mertin

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On the origin of contact resistances in graphene devices fabricated by optical lithography

机译：通过光刻技术制造的石墨烯器件中接触电阻的起源

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The contact resistance is a key bottleneck limiting the performance of graphene-based electronic and optoelectronic devices. Using a combined approach of atomic force microscopy patterning, Kelvin probe force microscopy and micro-Raman mapping, we study the influence of optical lithography resists on the contact resistance in graphene devices. We find that devices fabricated by optical lithography show a significantly larger contact resistance compared to devices produced by electron beam lithography using polymethylmethacrylate as resist. This difference is attributed to a 3-4-nm-thick residual layer remaining in between the contact metal and the graphene after optical lithography.

机译：接触电阻是限制基于石墨烯的电子和光电设备性能的关键瓶颈。使用原子力显微镜成像，开尔文探针力显微镜和显微拉曼映射的组合方法，我们研究了光刻胶对石墨烯器件中接触电阻的影响。我们发现，与使用聚甲基丙烯酸甲酯作为抗蚀剂的电子束光刻生产的设备相比，通过光学光刻生产的设备显示出明显更大的接触电阻。这种差异归因于光学光刻后在接触金属和石墨烯之间保留了3-4-nm厚的残留层。

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来源
《Applied Physics》 |2016年第2期|58.1-58.5|共5页
作者
Carlos Alvarado Chavarin; Abhay A. Sagade; Daniel Neumaier; Gerd Bacher; Wolfgang Mertin;
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作者单位

Werkstoffe der Elektrotechnik and CENIDE, Universitaet Duisburg-Essen, 47057 Duisburg, Germany;

Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, 52074 Aachen, Germany,Centre for Advanced Photonics and Electronics, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, UK;

Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, 52074 Aachen, Germany;

Werkstoffe der Elektrotechnik and CENIDE, Universitaet Duisburg-Essen, 47057 Duisburg, Germany;

Werkstoffe der Elektrotechnik and CENIDE, Universitaet Duisburg-Essen, 47057 Duisburg, Germany;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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1. Low-Contact-Resistance Graphene Devices with Nickel-Etched-Graphene Contacts [J] . Wei Sun Leong, Hao Gong, John T. L. Thong ACS nano . 2014,第1期

机译：具有镍刻蚀石墨烯触点的低接触电阻石墨烯器件
2. All-optical lithography process for contacting nanometer precision donor devices [J] . Ward Daniel R., Marshall Michael T., Campbell D. M., Applied Physics Letters . 2017,第19期

机译：用于接触纳米精密施主器件的全光学光刻工艺
3. DIP-PEN LITHOGRAPHY FOR FABRICATING GRAPHENE DEVICES [J] . Boo Zhenan Advanced manufacturing technology: Robotics, Rapid Prototyping, Assembly . 2011,第1期

机译：用于制造石墨烯设备的双笔光刻技术
4. High-Frequency Surface Acoustic Wave (SAW) Devices Fabricated by Contact-Transferred and Mask-Embedded Lithography [C] . Chin-Hsin Liu, Cheng-Yu Chiu, Yung-Chun Lee, IEEE International Conference on Nano/Micro Engineered and Molecular Systems . 2008

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5. Dielectrophoresis-based microfluidic devices fabricated by soft lithography. [D] . Garcia Cordero, Jose Luis. 2004

机译：通过软光刻制造的基于介电电泳的微流体装置。
6. Influenceof Humidity on Contact Resistance in GrapheneDevices [O] . Arne Quellmalz, ○, Anderson D. Smith, -1

机译：影响湿度对石墨烯接触电阻的影响设备
7. Low-Contact-Resistance Graphene Devices with Nickel-Etched-Graphene Contacts [O] . Leong, Wei Sun, Gong, Hao, Thong, John T. L. 2013

机译：具有镍蚀刻石墨烯的低接触电阻石墨烯器件往来

On the origin of contact resistances in graphene devices fabricated by optical lithography

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