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首页> 外文期刊>Applied Physics >Breakdown field enhancement of Si-based MOS capacitor by post-deposition annealing of the reactive sputtered ZrO_xN_y gate oxide
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Breakdown field enhancement of Si-based MOS capacitor by post-deposition annealing of the reactive sputtered ZrO_xN_y gate oxide

机译：通过反应性溅射ZrO_xN_y栅氧化物的沉积后退火增强Si基MOS电容器的击穿场

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摘要

Zirconium oxynitride (ZrO_xN_y) thin films were deposited on silicon (100) substrates by radio frequency-reactive magnetron sputtering in an argon-oxygen-nitrogen atmosphere. Post-deposition annealing (PDA) process was performed in argon ambient at various annealing temperatures (500, 600, 700 and 800 ℃) for 15 min. Metal-oxide-semiconductor capacitors were then fabricated with aluminum as the gate electrode. The effects of PDA process on the thin film's structural and electrical properties of the samples were investigated. The structural properties of the deposited films have been evaluated by atomic force microscopy, Fourier transform infrared spectroscopy and Raman spectroscopy. On the other hand, the electrical characterization of the film was conducted by current-voltage analysis. The Raman results revealed that (600-800 ℃) annealed samples comprised of crystalline multiphase films (t-ZrO_2, fcc-ZrN and bcc γ-Zr_2ON_2). Interfacial layer consisted of Zr-Si-O, Si-O-N and Si-O phase was formed for all investigated samples, and interfacial layer growth was suppressed when annealed at lower temperatures (500 ℃). Electrical result revealed that the sample annealed at a relatively low temperature of 500 ℃ has demonstrated the highest breakdown field which was attributed to the low surface roughness, the low interface trap and the highly amorphous multiphase film.
机译：在氩-氧-氮气氛中，通过射频反应磁控溅射将氧氮化锆（ZrO_xN_y）薄膜沉积在硅（100）衬底上。在氩气环境中，在各种退火温度（500、600、700和800℃）下进行沉积后退火（PDA）过程15分钟。然后用铝作为栅电极制造金属氧化物半导体电容器。研究了PDA工艺对样品的薄膜结构和电性能的影响。沉积膜的结构特性已经通过原子力显微镜，傅立叶变换红外光谱和拉曼光谱进行了评估。另一方面，通过电流-电压分析进行膜的电表征。拉曼结果表明，（600-800℃）退火样品由结晶多相膜（t-ZrO_2，fcc-ZrN和bccγ-Zr_2ON_2）组成。对于所有研究样品，均形成了由Zr-Si-O，Si-O-N和Si-O相组成的界面层，并且在较低温度（500℃）退火时，界面层的生长受到抑制。电学结果表明，在较低的500℃温度下退火的样品表现出最高的击穿场，这归因于低的表面粗糙度，低的界面陷阱和高度非晶的多相膜。

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  • 来源
    《Applied Physics》 |2016年第2期|66.1-66.6|共6页
  • 作者

    Chun Chet Chew; Kian Heng Goh; Mohammad Saleh Gorji; Chee Ghuan Tan; S. Ramesh; Yew Hoong Wong;

  • 作者单位

    Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia;

    Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia;

    Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia;

    Department of Civil Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia;

    Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia;

    Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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