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首页> 外文期刊>Applied Physics >The properties of samarium-doped zinc oxide/phthalocyanine structure for optoelectronics prepared by pulsed laser deposition and organic molecular evaporation
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The properties of samarium-doped zinc oxide/phthalocyanine structure for optoelectronics prepared by pulsed laser deposition and organic molecular evaporation

机译：脉冲激光沉积和有机分子蒸发制备的sa掺杂氧化锌/酞菁结构的光电性能

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摘要

Samarium-doped zinc oxide (ZnO:Sm)/zinc phthalocyanine (ZnPc) thin film multilayer structure was prepared by combination of pulsed laser deposition (PLD) and organic molecular evaporation (OME). ZnO:Sm thin film was grown by PLD (Nd:YAG, X = 266 nm, t = 6 ns) from Sm_2O_3:ZnO (1 % Sm) target in oxygen ambient at pressure of 10 and 20 Pa at room temperature on fused silica and Si(100) substrates. ZnPc thin film was deposited on ZnO:Sm layer by OME. ZnO:Sm films of c-axis-ori-ented hexagonal wurtzite structure and α-form ZnPc were obtained. Emission of intra-4f transition in Sm~(3+) ions and photoluminescence enhancement of near-band-edge emission of ZnO in ZnO:Sm/ZnPc were observed. Electrical properties were not affected by Sm~(3+) dopant as ZnO:Sm film exhibited high electrical resistivity ～5 × 10~4 Ω cm.
机译：通过脉冲激光沉积（PLD）和有机分子蒸发（OME）的组合，制备了掺ped的氧化锌（ZnO：Sm）/酞菁锌（ZnPc）薄膜多层结构。 ZnO：Sm薄膜是通过PLD（Nd：YAG，X = 266 nm，t = 6 ns）在室温和10 Pa到20 Pa的压力下于氧气环境中于氧气环境中从Sm_2O_3：ZnO（1％Sm）靶中生长的和Si（100）衬底。通过OME将ZnPc薄膜沉积在ZnO：Sm层上。得到了c轴取向的六方纤锌矿结构的ZnO：Sm膜和α型ZnPc。观察到了Sm〜（3+）离子中4f内跃迁的发射以及ZnO：Sm / ZnPc中ZnO近带边发射的光致发光增强。 ZnO：Sm薄膜的电阻率为〜5×10〜4Ωcm，具有较高的电阻率，因此电性能不受Sm〜（3+）掺杂剂的影响。

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  • 来源
    《Applied Physics》 |2016年第3期|225.1-225.8|共8页
  • 作者

    M. Novotny; E. Maresova; P. Fitl; J. Vlcek; M. Bergmann; M. Vondracek; R. Yatskiv; J. Bulir; P. Hubik; P. Hruska; J. Drahokoupil; N. Abdellaoui; M. Vrnata; J. Lancok;

  • 作者单位

    Institute of Physics, Czech Academy of Sciences, Na Slovance 2, 182 21 Prague, Czech Republic;

    Institute of Physics, Czech Academy of Sciences, Na Slovance 2, 182 21 Prague, Czech Republic,University of Chemistry and Technology, Prague, Technicka 5, 166 28 Prague 6, Czech Republic;

    Institute of Physics, Czech Academy of Sciences, Na Slovance 2, 182 21 Prague, Czech Republic,University of Chemistry and Technology, Prague, Technicka 5, 166 28 Prague 6, Czech Republic;

    Institute of Physics, Czech Academy of Sciences, Na Slovance 2, 182 21 Prague, Czech Republic,University of Chemistry and Technology, Prague, Technicka 5, 166 28 Prague 6, Czech Republic;

    University of Chemistry and Technology, Prague, Technicka 5, 166 28 Prague 6, Czech Republic;

    Institute of Physics, Czech Academy of Sciences, Na Slovance 2, 182 21 Prague, Czech Republic;

    Institute of Photonics and Electronics, Czech Academy of Sciences, Chaberska 57, 182 51 Prague 8, Czech Republic;

    Institute of Physics, Czech Academy of Sciences, Na Slovance 2, 182 21 Prague, Czech Republic;

    Institute of Physics, Czech Academy of Sciences, Na Slovance 2, 182 21 Prague, Czech Republic;

    Institute of Physics, Czech Academy of Sciences, Na Slovance 2, 182 21 Prague, Czech Republic,Faculty of Mathematics and Physics, Charles University in Prague, 180 00 Prague 8, Czech Republic;

    Institute of Physics, Czech Academy of Sciences, Na Slovance 2, 182 21 Prague, Czech Republic;

    Institut Lumiere Matiere, UMR5306 Universite Lyon 1-CNRS, Universite de Lyon, 69622 Villeurbanne Cedex, France;

    University of Chemistry and Technology, Prague, Technicka 5, 166 28 Prague 6, Czech Republic;

    Institute of Physics, Czech Academy of Sciences, Na Slovance 2, 182 21 Prague, Czech Republic;

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