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Fabrication of single-electron devices using dispersed nanoparticles and fitting experimental results to values calculated based on percolation model

机译:使用分散的纳米粒子制造单电子器件,并将实验结果拟合到基于渗透模型计算的值

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摘要

We calculated the connection probability, P_C, between electrodes on the basis of the triangular lattice percolation model for investigating the effect of distance variation between electrodes and the electrode width on fabricated capacitively coupled single-electron transistors. Single-electron devices were fabricated via the dispersion of gold nanoparticles (NPs). The NPs were dispersed via the repeated dropping of an NP solution onto a chip. The experimental results were fitted to the calculated values, and the fitting parameters were compared with the occupation probability, P-O, which was estimated for one drop of the NP solution. On the basis of curves of the drain current versus the drain-source voltage (I_D- V_(DS)) measured at 77 K, the current was suppressed at approximately 0 V.
机译:我们基于三角晶格渗流模型计算了电极之间的连接概率P_C,以研究电极之间的距离变化和电极宽度对制造的电容耦合单电子晶体管的影响。通过金纳米颗粒(NPs)的分散体来制造单电子器件。通过将NP溶液重复滴到芯片上来分散NP。将实验结果拟合到计算值,并将拟合参数与对一滴NP溶液估算的占领概率P-O进行比较。根据在77 K下测得的漏极电流与漏极-源极电压(I_D-V_(DS))的关系曲线,电流被抑制在大约0V。

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  • 来源
    《Applied Physics》 |2016年第8期|756.1-756.7|共7页
  • 作者单位

    The University of Electro-Communications, Chofu, Tokyo 182-8585, Japan;

    The University of Electro-Communications, Chofu, Tokyo 182-8585, Japan;

    The University of Electro-Communications, Chofu, Tokyo 182-8585, Japan;

    The University of Electro-Communications, Chofu, Tokyo 182-8585, Japan;

    Tokyo University of Technology, Hachioji, Tokyo 192-0983, Japan;

    Tohoku University, Sendai, Miyagi 980-8579, Japan;

    The University of Electro-Communications, Chofu, Tokyo 182-8585, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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