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首页> 外文期刊>Applied Physics >Advanced piezoelectric crystal Ca_3TaGa_3Si_2O_(14): growth, crystal structure perfection, and acoustic properties
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Advanced piezoelectric crystal Ca_3TaGa_3Si_2O_(14): growth, crystal structure perfection, and acoustic properties

机译：高级压电晶体Ca_3TaGa_3Si_2O_（14）：生长，晶体结构完善和声学特性

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摘要

A five-component crystal of the lanthanum-gallium silicate family Ca_3TaGa_3Si_2O_(14) (CTGS) was grown by the Czochralski method. The CTGS crystal, like the lang-asite crystal (La_3Ga_5SiO_(14), LGS), possesses unique temperature properties and the fewer number of the Ga atoms in the unit cell makes the density much lower and, consequently, increases the velocity of acoustic wave propagation. The unit-cell parameters were determined by the powder diffraction technique. The defects in the CTGS crystal structure were studied by X-ray topography, which enables the visualization of growth banding characteristics of crystals grown by the Czochralski method. Surface acoustic wave (SAW) propagation in the CTGS crystal was investigated by the high-resolution X-ray diffraction method on the BESSY Ⅱ synchrotron radiation source. The velocities of propagation and power flow angles of S AWs in the Y- and X-cuts of the CTGS crystal were determined from the X-ray diffraction spectra.
机译：通过切克劳斯基方法生长了镧-镓硅酸盐族Ca_3TaGa_3Si_2O_（14）（CTGS）的五组分晶体。 CTGS晶体与硅酸镧晶体（La_3Ga_5SiO_（14），LGS）一样，具有独特的温度特性，并且晶胞中Ga原子的数量较少使密度大大降低，因此增加了声波的速度传播。通过粉末衍射技术确定晶胞参数。通过X射线形貌研究了CTGS晶体结构中的缺陷，这使得通过切克劳斯基（Czochralski）方法生长的晶体的生长能带特性可视化。利用BESSYⅡ同步辐射源的高分辨率X射线衍射方法研究了声表面波在SAGS中的传播。从X射线衍射光谱确定CTGS晶体的Y形和X形切割中S AW的传播速度和功率流角。

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  • 来源
    《Applied Physics》 |2014年第4期|1105-1112|共8页
  • 作者

    Dmitry Roshchupkin; Luc Ortega; Olga Plotitcyna; Alexei Erko; Ivo Zizak; Dmitry Irzhak; Rashid Fahrtdinov; Oleg Buzanov;

  • 作者单位

    Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow District, Russia;

    Laboratoire de Physique des Solides, Universite Paris-Sud, CNRS, UMR 8502, 91405 Orsay Cedex, France;

    Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow District, Russia;

    Institute for Nanometre Optics and Technology, Helmholtz-Zentrum Berlin fur Materialien und Energie GmbH, Albert-Einstein Strasse 15, 12489 Berlin, Germany;

    Institute for Nanometre Optics and Technology, Helmholtz-Zentrum Berlin fur Materialien und Energie GmbH, Albert-Einstein Strasse 15, 12489 Berlin, Germany;

    Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow District, Russia;

    Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow District, Russia;

    FOMOS Materials Co., 105023 Buzheninova St. 16, Moscow, Russia;

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