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Influence of the Conductivity Type of Silicon on the Process of Radiation Degradation of Solar Cells

机译：硅的导电类型对太阳能电池辐射降解过程的影响

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摘要

The effectiveness of introduction of radiation defects (RDs) into the base of solar cells (SCs) during irradiation by γ-quanta ~(60)Co depending on resistivity and type of monocrystalline silicon and the effect of induced RDs on photoelectric characteristics of SCs is studied. It is shown that divacancies with levels E_c -0.39 eV and E_v +0.31 eV, due to the complex V-O-C, are the dominant radiation defects responsible for degradation of characteristics and parameters of silicon SCs during operation in radiation fields.
机译：根据单晶硅的电阻率和类型，以及在γ-量子〜（60）Co辐照过程中将辐射缺陷（RDs）引入太阳能电池（SCs）底部的效果取决于诱导电阻对SCs光电特性的影响。研究。结果表明，由于复杂的V-O-C，E_c -0.39 eV和E_v +0.31 eV能级的空位是造成辐射场中硅SC特性和参数下降的主要辐射缺陷。

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  • 来源
    《Applied solar energy》 |2013年第2期|62-66|共5页
  • 作者

    Sh. Makhkamov; R. A. Muminov; M. Karimov; N. A. Tursunov; A. R. Sattie; M. N. Erdonov; Kh. M. Kholmedo;

  • 作者单位

    Institute of Nuclear Physics, Uzbek Academy of Sciences, Uzbekistan;

    Physical Technical Institute, Physics of the Sun Scientific Association, Uzbek Academy of Sciences, Tashkent, Uzbekistan;

    Institute of Nuclear Physics, Uzbek Academy of Sciences, Uzbekistan;

    Institute of Nuclear Physics, Uzbek Academy of Sciences, Uzbekistan;

    Institute of Nuclear Physics, Uzbek Academy of Sciences, Uzbekistan;

    Institute of Nuclear Physics, Uzbek Academy of Sciences, Uzbekistan;

    Institute of Nuclear Physics, Uzbek Academy of Sciences, Uzbekistan;

  • 收录信息 美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
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