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首页> 外文期刊>Applied Surface Science >Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth
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Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth

机译：通过在脉冲MOCVD生长中重复沉积超薄层来设计InN外延层

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摘要

Capabilities of repeated deposition of ultrathin layers by pulsed metalorganic chemical vapor deposition (MOCVD) for improvement of structural and luminescence properties of InN thin films on GaN/sapphire templates were studied by varying the growth temperature and the durations of pulse and pause in the delivery of In precursor. X-ray diffraction, atomic force microscopy, and spatially-resolved photoluminescence (PL) spectroscopy were exploited to characterize the structural quality, surface morphology and luminescence properties. Better structural quality is achieved by using longer trimethylindium pulses. However, it is shown that the luminescence properties of InN epilayers correlate with the pause and pulse ratio rather than with their absolute lengths, and the deposition of 1.5-2 monolayers of InN during one growth cycle is optimal to achieve the highest PL intensity. Moreover, the use of temperature ramping enabled achieving the highest PL intensity and the smallest blue shift of the PL band. The luminescence parameters are linked with the structural properties, and domain-like patterns of InN layers are revealed. (C) 2017 Elsevier B.V. All rights reserved.
机译：通过改变生长温度，脉冲的持续时间和暂停发射的时间，研究了通过脉冲金属有机化学气相沉积（MOCVD）重复沉积超薄层来改善GaN /蓝宝石模板上InN薄膜的结构和发光性能的能力。在前体中。利用X射线衍射，原子力显微镜和空间分辨光致发光（PL）光谱来表征结构质量，表面形态和发光特性。通过使用更长的三甲基铟脉冲可以获得更好的结构质量。然而，已表明InN外延层的发光性质与停顿和脉冲比而不是其绝对长度相关，并且在一个生长周期内沉积1.5-2个InN单层是实现最高PL强度的最佳方法。此外，使用温度渐变可以实现PL波段的最高PL强度和最小的蓝移。发光参数与结构特性有关，并显示出InN层的畴状图案。 （C）2017 Elsevier B.V.保留所有权利。

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