Graphical Catalyst-free fabrication of novel ZnO/CuO core-Shell nanowires heterojunction: Controlled growth, structural and optoelectronic properties
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Catalyst-free fabrication of novel ZnO/CuO core-Shell nanowires heterojunction: Controlled growth, structural and optoelectronic properties

机译:新型ZnO / CuO核-壳纳米线异质结的无催化剂制备:受控的生长,结构和光电性质

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GraphicalabstractDisplay OmittedHighlightsCatalyst-Free Fabrication of Novel ZnO/CuO Core-Shell Nanowires HeterojunctionZnO NW has single crystalline hexagonal wurtzite structure while CuO nanostructure shell having polycrystalline monoclinic structure.Reflectance spectra of Core-Shell NWs in the visible region decreased by 18 % possessed advanced light absorption ability in this region.I-Vcharacteristics of core-shell heterojunction NWs measured by C-AFM showed excellent rectifying behavior of 1D coaxial p-n junction diodes.VBO and CBO measured by XPS are 2.4±0.05 and 0.23±0.005 eV respectively, showing Type-II band alignment structure.AbstractDevelopment of controlled growth and vertically aligned ZnO/CuO core-shell heterojunction nanowires (NWs) with large area by a catalyst free vapor deposition and oxidation approach has been investigated. Structural characterization reveals successful fabrication of a core ZnO nanowire having single crystalline hexagonal wurtzite structure along [002] direction and CuO nanostructure shell with thickness (8–10nm) having polycrystalline monoclinic structure. The optical property analysis suggests that the reflectance spectrum of ZnO/CuO heterostructure nanowires is decreased by 18% in the visible range, which correspondingly shows high absorption in this region as compared to pristine ZnO nanowires. The current-voltage (I–V) characteristics of core-shell heterojunction nanowires measured by conductive atomic force microscopy (C-AFM) shows excellent rectifying behavior, which indicates the characteristics of a good p-n junction. The high-resolution transmission electron microscopy (HRTEM) has confirmed the sharp junction interface between the core-shell heterojunction nanowire arrays. The valence band offset and conduction band offset at ZnO/CuO heterointerfaces are measured to be 2.4±0.05 and 0.23±0.005eV respectively, using X-ray photoelectron spectroscopy (XPS) and a type-II band alignment structure is found. The results of this study contribute to the development of new advanced device heterostructures for solar energy conversion and optoelectronics applications.
机译: 图形摘要 省略显示 突出显示 新型ZnO / CuO核壳纳米线异质结的无催化剂制备 ZnO NW具有单晶六角纤锌矿CuO纳米结构壳具有多晶单斜晶结构。 在可见区域内,核壳NW的反射光谱降低了18%,在该区域具有先进的吸光能力。 IV 用XPS测量的VBO和CBO分别为2.4±0.05 eV和0.23±0.005 eV,显示II型谱带对齐结构。 摘要 开发可控制的生长和垂直对齐的大面积ZnO / CuO核-壳异质结纳米线(NW)通过无催化剂气相沉积和氧化方法的研究。结构表征表明成功制造了沿[002]方向具有单晶六方纤锌矿结构的ZnO纳米线芯,以及具有多晶单斜晶结构的厚度(8-10nm)的CuO纳米结构壳。光学性质分析表明,ZnO / CuO异质结构纳米线的反射光谱在可见光范围内降低了18%,与原始ZnO纳米线相比,该区域相应地显示出高吸收。通过导电原子力显微镜(C-AFM)测量的核-壳异质结纳米线的电流-电压( IV )特性显示出优异的整流性能,这表明具有良好的特性。 pn结。高分辨率透射电子显微镜(HRTEM)证实了核-壳异质结纳米线阵列之间的锋利结界面。使用X射线光电子能谱(XPS)测量了ZnO / CuO异质界面的价带偏移和导带偏移,分别为2.4±0.05和0.23±0.005eV。这项研究的结果有助于开发用于太阳能转换和光电应用的新型先进器件异质结构。

著录项

  • 来源
    《Applied Surface Science》 |2018年第30期|718-732|共15页
  • 作者单位

    Centre for Sustainable Nanomaterials (CSNano) Ibnu Sina Institute for Scientific and Industrial Research, Universiti Teknologi Malaysia,Nanotechnology Research Alliance, Department of Physics, Faculty of Science, Universiti Technologi Malaysia;

    Razak School of Engineering and Advanced Technology Universiti Technologi Malaysia Kuala Lumpur Level 7, Razak Tower Jalan Semarak;

    Nanotechnology Research Alliance, Department of Physics, Faculty of Science, Universiti Technologi Malaysia;

    Chemical Reaction Engineering Group (CREG), Faculty of Chemical and Energy Engineering, Universiti Teknologi Malaysia;

    Centre for Sustainable Nanomaterials (CSNano) Ibnu Sina Institute for Scientific and Industrial Research, Universiti Teknologi Malaysia,Nanotechnology Research Alliance, Department of Physics, Faculty of Science, Universiti Technologi Malaysia;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Catalyst-free; ZnO/CuO core-shell NW arrays; C-AFM; p-n junction; Band offset; Type-II band alignment;

    机译:无催化剂;ZnO / CuO核-壳NW阵列;C-AFM;p-n结;带偏移;II型能带对准;

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