利用无催化选区金属有机化学气相沉积(SA-MOCVD)法在GaAs(111)B衬底上分别制备了GaAs纳米线和GaAs/InxGa1-xAs/GaAs纳米线径向异质结构.系统地研究了生长条件对GaAs纳米线生长的影响.实验结果显示， GaAs纳米线的形貌和长度依赖于生长温度、AsH3的分压以及SiO2掩膜表面的圆孔直径.因此可以通过调节以上因素来得到高质量的GaAs纳米线.并且发现扩散是影响无催化选区生长GaAs纳米线的主要机理.微区光致发光谱(µ-PL)表明， GaAs/InxGa1-xAs/GaAs纳米线径向异质结构被成功合成，室温(300 K)下它的发光波长为913 nm.这些结果对于GaAs纳米线及其异质结构制备的进一步研究及其在光电子器件中的应用具有很好的参考价值.%We have investigated the catalyst-free selective-area growth of GaAs and GaAs/InxGa1−xAs/GaAs (0 < x < 1) radial heterostructure nanowires on GaAs(111)B substrate by MOCVD. Our results show that the selective-area growth of GaAs nanowires is strongly dependent on growth conditions, such as the growth temperature and the pressure of AsH3. GaAs nanowire length would become longer by reducing the mask opening size. Thus we can form the GaAs nanowire uniform arrays with appropriate length and width by controling growth conditions and mask opening size. Then the photoluminescence measurement of GaAs/InxGa1−xAs/GaAs (0展开▼
