Kinetics of the laser-induced solid phase crystallization of amorphous silicon Time-resolved Raman spectroscopy and computer simulations

Ocenasek J.; Novak P.; Prusakova L.

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Kinetics of the laser-induced solid phase crystallization of amorphous silicon Time-resolved Raman spectroscopy and computer simulations

机译：激光诱导非晶硅固相结晶的动力学时间分辨拉曼光谱和计算机模拟

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This study demonstrates that a laser-induced crystallization instrumented with Raman spectroscopy is, in general, an effective tool to study the thermally activated crystallization kinetics. It is shown, for the solid phase crystallization of an amorphous silicon thin film, that the integral intensity of Raman spectra corresponding to the crystalline phase grows linearly in the time-logarithmic scale. A mathematical model, which assumes random nucleation and crystal growth, was designed to simulate the crystallization process in the non-uniform temperature field induced by laser. The model is based on solving the Eikonal equation and the Arhenius temperature dependence of the crystal nucleation and the growth rate. These computer simulations successfully approximate the crystallization process kinetics and suggest that laser-induced crystallization is primarily thermally activated. (C) 2016 Elsevier B.V. All rights reserved.

机译：这项研究表明，使用拉曼光谱仪进行激光诱导的结晶通常是研究热活化结晶动力学的有效工具。对于非晶硅薄膜的固相结晶，表明对应于结晶相的拉曼光谱的积分强度在时间对数尺度上线性增长。设计了一个假设随机成核和晶体生长的数学模型，以模拟激光诱导的非均匀温度场中的结晶过程。该模型基于求解Eikonal方程和Arhenius温度对晶体成核度和生长速率的依赖性。这些计算机模拟成功地近似了结晶过程的动力学，并表明激光诱导的结晶主要是热活化的。（C）2016 Elsevier B.V.保留所有权利。

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《Applied Surface Science》 |2017年第15期|867-871|共5页
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Ocenasek J.; Novak P.; Prusakova L.;
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Univ West Bohemia, New Technol Res Ctr, Plzen 30614, Czech Republic;

Univ West Bohemia, New Technol Res Ctr, Plzen 30614, Czech Republic;

Univ West Bohemia, New Technol Res Ctr, Plzen 30614, Czech Republic;

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1. Kinetics of solid phase crystallization of amorphous silicon analyzed by Raman spectroscopy [J] . Won-Eui Hong, Jae-Sang Ro Journal of Applied Physics . 2013,第7期

机译：拉曼光谱分析非晶硅的固相结晶动力学
2. Computer simulations of crystallization kinetics in amorphous silicon under pressure [J] . Shanavas K. V., Pandey K. K., Garg Nandini, Journal of Applied Physics . 2012,第6期

机译：压力下非晶硅结晶动力学的计算机模拟
3. Computer simulations of crystallization kinetics in amorphous silicon under pressure [J] . K. V. Shanavas, K. K. Pandey, Nandini Garg, Journal of Applied Physics . 2012,第6期

机译：压力下非晶硅结晶动力学的计算机模拟
4. Laser-induced crystallization of amorphous silicon-carbon alloys studied by Raman microspectroscopy [C] . C. Palma, M. C. Rossi, C. Sapia, Symposium G on surface proceeding: Laser, lamp, plasma of the E-MRS conference . 1999

机译：拉曼微型光谱学研究的激光诱导的非晶硅碳合金结晶
5. Plasma enhanced chemical vapor deposition of silicon based thin film materials: Real-time process sensing using mass spectroscopy and low temperature (< 600 degrees Celcius) solid phase crystallization [D] . Chowdhury, Ashfaqul Islam 1999

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6. Crystallization and Phase Changes in Paracetamol fromthe Amorphous Solid to the Liquid Phase [O] . Juraj Sibik, Michael J. Sargent, Miriam Franklin, -1

机译：扑热息痛中的结晶和相变非晶态固体到液相
7. Solid Phase Crystallization Kinetics of Amorphous Silicon at High Temperatures [O] . Won-Eui Hong, Bo-Kyung Kim, Jae-Sang Ro 2008

机译：高温下无定形硅的固相结晶动力学
8. Kinetics of Solid-Phase Crystallization in Ion-Implanted and Deposited Amorphous-Silicon Films [R] . Olson, G. L., Roth, J. A., Hess, L. D., 1983

机译：离子注入和沉积非晶硅薄膜中固相结晶动力学

Kinetics of the laser-induced solid phase crystallization of amorphous silicon Time-resolved Raman spectroscopy and computer simulations

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