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首页> 外文期刊>Applied Surface Science >Magnetotransport investigations of (Ga,Mn)As/GaAs Esaki diodes under hydrostatic pressure
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Magnetotransport investigations of (Ga,Mn)As/GaAs Esaki diodes under hydrostatic pressure

机译：（Ga，Mn）As / GaAs Esaki二极管在静水压力下的磁输运研究

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First investigations of ferromagnetic (Ga,Mn)As/GaAs Esaki diodes under hydrostatic pressure were performed. The I(V) characteristics had bi-exponential character with two excess current regions related to impurity-assisted tunneling, which concealed band-to-band tunneling, resolved only in the logarithmic derivative of current upon bias. A decrease of tunneling current was observed under pressure. This is understood as a combined effect of the increase of the energy gap with pressure and a possible decrease of density of states in the forbidden gap. Tunneling anisotropic magnetocurrent (TAMI) showed nonmonotonic bias dependence, which stays in a reasonable agreement with the theory by Sankowski (2007). The overall character of the TAMI did not change with pressure, however, at negative bias an increase of TAMI was observed and at positive bias the minimum became shallower. The magnetic anisotropy of (Ga,Mn)As valence band subbands seems unaltered by hydrostatic pressure, but more in-depth description of TAMI is necessary to explain the observed pressure variation. (C) 2016 Elsevier B.V. All rights reserved.
机译：在静水压力下对铁磁（Ga，Mn）As / GaAs Esaki二极管进行了初步研究。 I（V）特性具有双指数特性，其中两个与杂质辅助隧穿有关的多余电流区域隐藏了带间隧穿，仅在偏置时电流的对数导数中解析。在压力下观察到隧穿电流减小。这被理解为能量间隙随着压力的增加和禁止间隙中状态密度的可能降低的综合作用。隧道各向异性磁流（TAMI）表现出非单调偏置依赖性，与Sankowski（2007）的理论保持合理的一致性。 TAMI的总体特征并未随压力而变化，但是，在负偏差下，观察到TAMI增加，而在正偏差下，最小值变得更浅。 （Ga，Mn）As价带子带的磁各向异性似乎不受静水压力的影响而改变，但是必须对TAMI进行更深入的描述才能解释观察到的压力变化。 （C）2016 Elsevier B.V.保留所有权利。

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