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Temperature dependence of nickel oxide effect on the optoelectronic properties of porous silicon

机译：氧化镍的温度依赖性对多孔硅光电性能的影响

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摘要

This paper investigates the effect of Nickel oxide (NiO) on the structural and optical properties of porous silicon (PS). Our investigations showed an obvious improvement of porous silicon optoelectronique properties after coating the PS with NiO thin film as a passivating process. The as-prepared NiO/PS thin film was subjected to a thermal annealing to study the effect of temperature on the efficiency of this treatment. The deposition of NiO onto the porous silicon layer was performed using the spray pyrolysis method. The surface modification of the as-prepared NiO/PS samples was investigated after annealing at various temperatures, using an infrared furnace, ranging between 300 degrees C and 600 degrees C. The X-ray Diffraction results showed that obtained films show cubic structure with preferred (200) plane orientation. We found an obvious dependence of the PS nanocrystallites size (nc-Si) to the annealing temperature. Photoluminescence (PL) is directly related to the electronic structure and transitions. The characteristic change of the band gap with decrease in size of the nanostructures can be pointed out by the observed blue shift in the photoluminescence spectra. Nickel oxide treatment of Porous silicon led to a significant increase of photoluminescence with a resulting blue-shift at higher annealing temperature. The surface morphology was examined by scanning electron microscope (SEM), and FTIR spectroscopy was used to study the chemical composition of the films. Moreover, the total reflectivity of NiO/PS samples decreases noticeably comparing to an untreated PS layer due to an enhanced light absorption. (C) 2017 Elsevier B.V. All rights reserved.
机译：本文研究了氧化镍（NiO）对多孔硅（PS）的结构和光学性质的影响。我们的研究表明，在用钝化工艺涂覆了NiO薄膜的PS后，多孔硅光电性能得到了明显改善。将制备的NiO / PS薄膜进行热退火，以研究温度对这种处理效率的影响。使用喷雾热解法在多孔硅层上沉积NiO。使用红外线炉在300摄氏度至600摄氏度之间的不同温度下退火后，对制得的NiO / PS样品的表面改性进行了研究。X射线衍射结果表明，所得薄膜呈立方结构，优选（200）平面方向。我们发现PS纳米晶粒尺寸（nc-Si）与退火温度之间存在明显的相关性。光致发光（PL）与电子结构和跃迁直接相关。通过观察到的光致发光光谱中的蓝移可以指出带隙随纳米结构尺寸减小的特征变化。多孔硅的氧化镍处理导致光致发光的显着增加，并在较高的退火温度下导致蓝移。通过扫描电子显微镜（SEM）检查表面形态，并使用FTIR光谱研究膜的化学组成。而且，由于光吸收增强，与未处理的PS层相比，NiO / PS样品的总反射率明显降低。 （C）2017 Elsevier B.V.保留所有权利。

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  • 来源
    《Applied Surface Science》 |2017年第may15期|34-39|共6页
  • 作者

    Riahi R.; Derbali L.; Ouertani B.; Ezzaouia H.;

  • 作者单位

    Res & Technol Ctr Energy, Lab Semicond Nanostruct & Adv Technol, Tourist Rd Soliman,BP 95, Hammam Lif, Tunisia|Tunis El Manar Univ, Fac Sci, Tunis, Tunisia;

    Res & Technol Ctr Energy, Lab Semicond Nanostruct & Adv Technol, Tourist Rd Soliman,BP 95, Hammam Lif, Tunisia;

    Res & Technol Ctr Energy, Lab Semicond Nanostruct & Adv Technol, Tourist Rd Soliman,BP 95, Hammam Lif, Tunisia|Higher Inst Environm Sci & Technol, Borj Cedria, Tunisia;

    Res & Technol Ctr Energy, Lab Semicond Nanostruct & Adv Technol, Tourist Rd Soliman,BP 95, Hammam Lif, Tunisia;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Porous silicon (PS); Nickel oxide; Spray pyrolysis; X-ray diffraction (XRD); UV-vis-NIR spectrometer; Photoluminescence (PL);

    机译：多孔硅（PS）;氧化镍;喷雾热解;X射线衍射（XRD）;UV-vis-NIR光谱仪;光致发光（PL）;

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