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首页> 外文期刊>Applied Surface Science >Anisotropic Raman scattering and mobility in monolayer 1T(d)-ReS2 controlled by strain engineering
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Anisotropic Raman scattering and mobility in monolayer 1T(d)-ReS2 controlled by strain engineering

机译：应变工程控制的单层1T（d）-ReS2各向异性拉曼散射和迁移率

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摘要

Regulation of electronic structure and mobility cut-on rate in two-dimensional transition metal dichalcogenides (TMDs) has attracted much attention because of its potential in electronic device design. The anisotropic Raman scattering and mobility cut-on rate of monolayer unique distorted-1T (1T(d)) ReS2 with external strain are determined theoretically based on the density function theory. The angle-dependent Raman spectrum of A(g)-like, E-g-like and C-p models are used to discriminate and analysis structural anisotropy; the strain is exploited to adjust the structural symmetry and electronic structure of ReS2 so as to enhance mobility cut-on rate to almost 6 times of the original value. Our results suggest the use of the strain engineering in high-quality semiconductor switch device. (C) 2017 Elsevier B.V. All rights reserved.
机译：二维过渡金属二卤化二金属锡（TMD）中电子结构和迁移率截止速率的调节因其在电子设备设计中的潜力而备受关注。基于密度函数理论，从理论上确定了具有外应变的单层独特畸变的1T（1T（d））ReS2的各向异性拉曼散射和迁移率截止速率。 A（g），E-g和C-p模型的角度依赖拉曼光谱用于区分和分析结构各向异性。利用该菌株来调节ReS2的结构对称性和电子结构，从而将迁移率截止速率提高到原始值的近6倍。我们的结果表明在高品质半导体开关器件中使用应变工程。 （C）2017 Elsevier B.V.保留所有权利。

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  • 来源
    《Applied Surface Science》 |2017年第may15期|276-281|共6页
  • 作者

    Zhou Z. H.; Wei B. C.; He C. Y.; Min Y. M.; Chen C. H.; Liu L. Z.; Wu X. L.;

  • 作者单位

    Nanjing Univ, Inst Acoust, MOE, Key Lab Modern Acoust, Nanjing 210093, Peoples R China|Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China;

    Nanjing Univ, Inst Acoust, MOE, Key Lab Modern Acoust, Nanjing 210093, Peoples R China|Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China;

    Nanjing Univ, Inst Acoust, MOE, Key Lab Modern Acoust, Nanjing 210093, Peoples R China|Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China;

    Nanjing Univ, Inst Acoust, MOE, Key Lab Modern Acoust, Nanjing 210093, Peoples R China|Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China;

    Nanjing Univ, Inst Acoust, MOE, Key Lab Modern Acoust, Nanjing 210093, Peoples R China|Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China;

    Nanjing Univ, Inst Acoust, MOE, Key Lab Modern Acoust, Nanjing 210093, Peoples R China|Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China;

    Nanjing Univ, Inst Acoust, MOE, Key Lab Modern Acoust, Nanjing 210093, Peoples R China|Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Anisotropy; ReS2; Raman scattering; Mobility; Strain engineering;

    机译：各向异性;ReS2;拉曼散射;迁移率;应变工程;

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