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Influence of the sputtering pressure on the morphological features and electrical resistivity anisotropy of nanostructured titanium films

机译：溅射压力对纳米结构钛膜形貌和电阻率各向异性的影响

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摘要

Titanium films were DC sputtered with a particle flux incidence angle of 80 degrees, using the Glancing Angle Deposition (GLAD) technique with increasing sputtering pressures from 0.2 to 1.5 Pa. This range of pressures is typically implemented for the deposition of thin films by the magnetron sputtering process. The main objective of this work was to study the anisotropic electrical resistivity behaviour of the different thin film nanostructures that were obtained. It is shown that low sputtering pressures (0.2-0.5 Pa) promote higher column angles beta with respect to the substrate normal (15 degrees <= beta <= 40 degrees), as well as better defined porous structures. On the other hand, intermediate and high pressures (0.6-0.8 Pa) originate secondary growth effects on the columnar structures perpendicular to the substrate normal (beta = 0 degrees). No defined columns can be seen when the films are sputtered using the highest pressure (1.5 Pa). The electrical resistivity is significantly affected by the differences in the columnar microstructure. Porous films exhibit higher room temperature (RT) resistivity values (0.95-1.5 x 10-5 Omega m), when compared to the more compact ones (0.6-0.9 x 10(-5) Omega m). When a temperature cycle of RT(25)-300-RT(25)degrees C was applied, a more significant oxidation is evidenced in the more porous structures, as well as a higher resistivity anisotropy (maximum of 1.6) than in the more compact ones (minimum of 1.25). (C) 2017 Elsevier B.V. All rights reserved.
机译：使用掠射角沉积（GLAD）技术将溅射压力从0.2 Pa增加到1.5 Pa，以80度的粒子通量入射角DC溅射钛膜。该压力范围通常用于磁控管沉积薄膜溅射工艺。这项工作的主要目的是研究获得的不同薄膜纳米结构的各向异性电阻率行为。结果表明，相对于基板法线（15度<=β<= 40度），低溅射压力（0.2-0.5 Pa）促进了更高的柱角β，以及更好的多孔结构。另一方面，中压和高压（0.6-0.8 Pa）对垂直于基底法线（β= 0度）的柱状结构产生二次生长效应。使用最高压力（1.5 Pa）溅射薄膜时，看不到明确的列。柱状微结构的差异显着影响电阻率。与更紧密的薄膜（0.6-0.9 x 10（-5）Ωm）相比，多孔膜表现出更高的室温（RT）电阻率值（0.95-1.5 x 10-5Ωm）。当应用温度周期为RT（25）-300-RT（25）的温度时，与更紧凑的结构相比，多孔性更高的结构和更大的电阻率各向异性（最大值为1.6）证明了更明显的氧化作用一个（最低1.25）。 （C）2017 Elsevier B.V.保留所有权利。

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  • 来源
    《Applied Surface Science》 |2017年第31期|681-690|共10页
  • 作者

    Pedrosa Paulo; Ferreira Armando; Cote Jean-Marc; Martin Nicolas; Yazdi Mohammad Arab Pour; Billard Alain; Lanceros-Mendez Senentxu; Vaz Filipe;

  • 作者单位

    Univ Bourgogne Franche Comte, UMR CNRS 6174, Inst FEMTO ST, 15 B Ave Montboucons, F-25030 Besancon, France;

    Univ Minho, Ctr Fis, P-4710057 Braga, Portugal;

    Univ Bourgogne Franche Comte, UMR CNRS 6174, Inst FEMTO ST, 15 B Ave Montboucons, F-25030 Besancon, France;

    Univ Bourgogne Franche Comte, UMR CNRS 6174, Inst FEMTO ST, 15 B Ave Montboucons, F-25030 Besancon, France;

    Univ Bourgogne Franche Comte, UTBM, UMR CNRS 6174, Inst FEMTO ST, Site Montbeliard, F-90010 Belfort, France;

    Univ Bourgogne Franche Comte, UTBM, UMR CNRS 6174, Inst FEMTO ST, Site Montbeliard, F-90010 Belfort, France;

    Univ Minho, Ctr Fis, P-4710057 Braga, Portugal|BCMaterials, Parque Cient & Tecnol Bizkaia, Derio 48160, Spain|Basque Fdn Sci, Ikerbasque, Bilbao 48013, Spain;

    Univ Minho, Ctr Fis, P-4710057 Braga, Portugal;

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  • 正文语种 eng
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  • 关键词

    Glancing angle deposition; Titanium; Nanostructured films; Anisotropy; Electrical resistivity;

    机译：掠角沉积;钛;纳米结构膜;各向异性;电阻率;

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