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Research on Si (100) crystal substrate CMP based on FA/O alkaline slurry

机译：基于FA / O碱性浆料的Si（100）晶体衬底CMP的研究

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摘要

For the advanced IC technology nodes, the surface quality of the polished silicon substrate surface becomes more and more critical. Haze is used to characterize extremely small pits scatter light disproportionately at the angle of measurement (90 degrees), and Haze collected on full wafer scale with high throughput is the key CMP output parameter in an advanced CMP process. In this study, the influence of surface defects especially scratch, particle contamination, and surface roughness on Haze was investigated. The results indicate scratch and particle contamination take some influence on Haze, and Haze increases quickly with the increasing of surface roughness. So it can be concluded that surface roughness is the key affecting factor of Haze. In addition, the influence of FA/O surfactant in the alkaline slurry on Haze was studied. The results show FA/O surfactant can effectively decrease Haze. Finally, the advantages of the FA/O alkaline slurry were exhibited by the contrast experiments. A much lower level of metallic ions residual and a much better WIWNU were gotten for silicon wafers polished by FA/O alkaline slurry than that by the commercial one. Hence, the FA/O alkaline slurry provides a high quality silicon wafer surface. The results are helpful for researching the silicon CMP as well as the other materials. (C) 2017 Elsevier B.V. All rights reserved.
机译：对于先进的IC技术节点，抛光的硅衬底表面的表面质量变得越来越关键。雾度用于在测量角度（90度）上不成比例地表征极小的凹坑散射光，在先进的CMP工艺中，以高通量在全晶圆规模上收集的雾度是关键的CMP输出参数。在这项研究中，研究了表面缺陷，特别是划痕，颗粒污染和表面粗糙度对雾度的影响。结果表明划痕和颗粒污染对雾度有一定影响，雾度随表面粗糙度的增加而迅速增加。因此可以得出结论，表面粗糙度是雾度的关键影响因素。另外，研究了碱性浆料中FA / O表面活性剂对雾度的影响。结果表明，FA / O表面活性剂可以有效降低雾度。最后，对比实验表明了FA / O碱性浆料的优势。与商用产品相比，用FA / O碱性浆料抛光的硅片的金属离子残留量低得多，WIWNU更好。因此，FA / O碱性浆料提供了高质量的硅晶片表面。研究结果对研究硅CMP以及其他材料很有帮助。 （C）2017 Elsevier B.V.保留所有权利。

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  • 来源
    《Applied Surface Science》 |2017年第31期|483-488|共6页
  • 作者

    Hong Jiao; Niu Xinhuan; Wang Juan; Wang Chenwei; Zhang Baoguo; Wang Ru; Sun Ming; Liu Yuling;

  • 作者单位

    Hebei Univ Technol, Sch Elect & Informat Engn, Tianjin 300130, Peoples R China|Tianjin Key Lab Elect Mat & Devices, Tianjin 300130, Peoples R China;

    Hebei Univ Technol, Sch Elect & Informat Engn, Tianjin 300130, Peoples R China|Tianjin Key Lab Elect Mat & Devices, Tianjin 300130, Peoples R China;

    Hebei Univ Technol, Sch Elect & Informat Engn, Tianjin 300130, Peoples R China|Tianjin Key Lab Elect Mat & Devices, Tianjin 300130, Peoples R China;

    Hebei Univ Technol, Sch Elect & Informat Engn, Tianjin 300130, Peoples R China|Tianjin Key Lab Elect Mat & Devices, Tianjin 300130, Peoples R China;

    Hebei Univ Technol, Sch Elect & Informat Engn, Tianjin 300130, Peoples R China|Tianjin Key Lab Elect Mat & Devices, Tianjin 300130, Peoples R China;

    Hebei Univ Technol, Sch Elect & Informat Engn, Tianjin 300130, Peoples R China|Tianjin Key Lab Elect Mat & Devices, Tianjin 300130, Peoples R China;

    Hebei Univ Technol, Sch Elect & Informat Engn, Tianjin 300130, Peoples R China|Tianjin Key Lab Elect Mat & Devices, Tianjin 300130, Peoples R China;

    Hebei Univ Technol, Sch Elect & Informat Engn, Tianjin 300130, Peoples R China|Tianjin Key Lab Elect Mat & Devices, Tianjin 300130, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    Silicon crystal substrate; FA/O alkaline slurry; Haze; Low metallic ions residue; WIWNU;

    机译：硅晶体基质;FA / O碱性浆料;雾度;低金属离子残留;WIWNU;

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