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Influences of oxygen incorporation on the structural and optoelectronic properties of Cu2ZnSnS4 thin films

机译：氧的掺入对Cu2ZnSnS4薄膜结构和光电性能的影响

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This study used the sol-gel method to prepare Cu2ZnSnS4 thin films containing oxygen and explored the composition, structural, and optoelectronic properties of the films. The non-vacuum process enabled the oxygen content of the Cu2ZnSnS4 films to be 8.89 at% and 10.30 at% for two different annealing conditions. In the crystal structure, oxygen was substituted at the positions of sulfur and appeared in the interstitial sites of the lattice. The compositions of the thin films deviated from the stoichiometric ratio. Both films had kesterite structures with no secondary phase structure. The kesterite CZTS film possessed a composite microstructure of crystallite and crystalline states. The microstructure of the Cu2ZnSnS4 film with higher oxygen content was denser and the average grain size was smaller. Incorporating oxygen atoms into crystalline Cu2ZnSnS4 changed the energy band structure: the direct energy band gaps were, respectively, 2.75 eV and 2.84 eV; the thin films mainly adsorbed photons with wavelengths less than 500 nm; and the absorption coefficients increased from 10(4) cm(-1) to 105 cm(-1). The films had a comparatively high absorptive capacity for photons less than 350 nm. Increasing the oxygen content of the film lowered the resistivity. Thus, the oxygen-containing Cu2ZnSnS4 thin film could be a candidate for the p-type absorber layer material required in multi -junction solar cells. (C) 2016 Elsevier B.V. All rights reserved.
机译：本研究采用溶胶-凝胶法制备了含氧的Cu2ZnSnS4薄膜，并探讨了其组成，结构和光电性能。在两种不同的退火条件下，通过非真空工艺，Cu2ZnSnS4薄膜的氧含量分别为8.89 at％和10.30 at％。在晶体结构中，氧在硫的位置被取代并出现在晶格的间隙位置。薄膜的组成偏离化学计量比。两种膜均具有不具有第二相结构的钙钛矿结构。 Kesterite CZTS膜具有微晶和晶态的复合微观结构。含氧量较高的Cu2ZnSnS4薄膜的组织较致密，平均晶粒尺寸较小。将氧原子掺入晶体Cu2ZnSnS4中改变了能带结构：直接能带隙分别为2.75 eV和2.84 eV；薄膜主要吸收波长小于500nm的光子。吸收系数从10（4）cm（-1）增加到105 cm（-1）。薄膜对小于350 nm的光子具有相对较高的吸收能力。膜中氧含量的增加降低了电阻率。因此，含氧的Cu2ZnSnS4薄膜可能是多结太阳能电池中所需的p型吸收层材料的候选材料。 （C）2016 Elsevier B.V.保留所有权利。

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