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首页> 外文期刊>Applied Surface Science >HfO2 gate dielectric on Ge (111) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment
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HfO2 gate dielectric on Ge (111) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment

机译：Ge（111）上的HfO2栅极电介质，具有通过快速热NH3处理形成的超薄氮化物界面层

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Interfacial properties of the ALD deposited HfO2 over the surface nitrided germanium substrate have been studied. The formation of GeON (similar to 1.7 nm) was confirmed by X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron spectroscopy (HRTEM) over the germanium surface. The effect of post deposition annealing temperature was investigated to study the interfacial and electrical properties of hafnium oxide/germanium oxynitride gate stacks. The high-k MOS devices with ultrathin GeON layer shows the good electrical characteristics including higher k value similar to 18, smaller equivalent oxide thickness (EOT) around 1.5 nm and smaller hysteresis value less than 170 mV. The Q(eff) and D-it values are somewhat greater due to the (1 1 1) orientation of the germanium and may be due to the presence of nitrogen at the interface. The Fowler-Northeim (FN) tunneling of Ge MOS devices has been studied. The barrier height Phi(B) extracted from the plot is similar to 1 eV. (C) 2016 Elsevier B.V. All rights reserved.
机译：已经研究了在氮化氮化​​锗衬底上ALD沉积的HfO2的界面性质。通过X射线光电子能谱（XPS）和高分辨率透射电子能谱（HRTEM）在锗表面上证实了GeON（约1.7 nm）的形成。研究了沉积后退火温度的影响，以研究氧化ha /氮氧化锗栅堆叠的界面和电学性质。具有超薄GeON层的高k MOS器件显示出良好的电特性，包括与18类似的更高k值，在1.5 nm附近更小的等效氧化物厚度（EOT）和小于170 mV的更小的磁滞值。由于锗的（1 1 1）取向，Q（eff）和D-it值略大，可能是由于界面处存在氮。研究了Ge ​​MOS器件的Fowler-Northeim（FN）隧穿。从图中提取的势垒高度Phi（B）类似于1 eV。 （C）2016 Elsevier B.V.保留所有权利。

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