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Stabilized copper plating method by programmed electroplated current: Accumulation of densely packed copper grains in the interconnect

机译:通过编程的电镀电流稳定镀铜的方法:互连中密集堆积的铜颗粒的堆积

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In this work, we programmed the plating current to stack the different size of copper (Cu) grain and analyzed the relation between the sequence of different Cu grain size and the stability of the residual stress. The residual stress was measured with varying times of annealing process in order to reach the purpose of simulating the actual Cu interconnect process. We found that varied plating strategy will make different stabilization condition of residual stress through the proof of X-ray diffraction (XRD) and optical parallel beams reflection (PBR) method. The accumulation of Cu grains, formed by Cu grain with successive variation in grain size, would enhance the packing density better than only single grain size in the finite space. The high density of the grain boundary in the electroplated Cu film will be eliminated through annealing process and it will help to suppress the void formation in further interconnect process. The electroplated Cu film with the plating current of saw tooth wave can soon reach a stable tensile stress through annealing since the Cu grains with high packing density will be quickly eliminated to approach the minimum of the strain energy which reflects to variation in the texture of Cu (200). The result of this work illustrates the importance of how to stack different size of Cu grain, for achieving a densely packed Cu film which close to the Cu bulk. (C) 2016 Elsevier B.V. All rights reserved.
机译:在这项工作中,我们编程电镀电流以堆叠不同尺寸的铜(Cu)晶粒,并分析了不同Cu晶粒尺寸的序列与残余应力稳定性之间的关系。为了达到模拟实际的铜互连工艺的目的,在不同的退火工艺时间内测量了残余应力。我们发现,通过X射线衍射(XRD)和光学平行光束反射(PBR)方法的证明,不同的电镀策略将使残余应力的稳定条件不同。由Cu晶粒随晶粒尺寸连续变化而形成的Cu晶粒的堆积,在有限的空间内比仅单个晶粒尺寸更好地提高了堆积密度。电镀铜膜中晶界的高密度将通过退火工艺消除,这将有助于抑制进一步互连工艺中形成空隙。具有锯齿波电镀电流的电镀铜膜可以通过退火很快达到稳定的拉伸应力,因为具有高堆积密度的铜晶粒将被快速消除,从而接近最小的应变能,这反映了铜的织构变化。 (200)。这项工作的结果说明了如何堆叠不同尺寸的Cu颗粒对于获得接近Cu块的致密堆积Cu膜的重要性。 (C)2016 Elsevier B.V.保留所有权利。

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