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首页> 外文期刊>Applied Surface Science >Fabrication and sulfurization of Cu2SnS3 thin films with tuning the concentration of Cu-Sn-S precursor ink
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Fabrication and sulfurization of Cu2SnS3 thin films with tuning the concentration of Cu-Sn-S precursor ink

机译：通过调节Cu-Sn-S前体油墨的浓度来制备和硫化Cu2SnS3薄膜

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摘要

In this study, Cu-Sn-S nanoinks were synthesized by combining chelating polyetheramine to Cu, Sn, S powders of various concentrations. X-ray diffraction patterns indicate that nanoinks synthesized at low concentrations are composed almost entirely of binary phases SnS and Cu2S. Synthesizing nanoinks at higher concentrations decreased the quantity of binary phase and led to the appearance of ternary phase Cu4SnS4. Following sulfurization, single phase Cu2SnS3 (CTS) thin film was obtained from nanoinks of low concentration; however, impurities, such as Cu2S were detected in the thin film obtained from nanoinks of high concentration. This can be attributed to the fact that lower concentrations reduce the reactivity of all the elements. As a result, the SnS phase reacted more readily and more rapidly, resulting in the early formation of a stoichiometric CTS thin film during sulfurization. Under these reaction conditions, Cu2S and SnS transform into CTS and thereby prevent the formation of unwanted phases of Cu2S and Cu4SnS4. Raman spectra revealed that second phase Cu2S phase remained in the high-concentration samples, due to an increase in reactivity due to the participation of a greater proportion of the copper in the reaction. The surface microstructure of low-concentration samples display closely packed Cu2SnS3 grains with a flat morphology and an atomic composition ratio of Cu:Sn:S = 34.69:15.90:49.41, which is close to stoichiometric. Hall measurement revealed that low-concentration sample has superior electrical properties; i.e., a hole concentration of 5.23 x 10(17) cm(3), mobility of 14.2 cm(2)/V-s, and optical band-gap energy of 1.346 eV, which are suitable for thin-film solar cells. (C) 2016 Elsevier B.V. All rights reserved.
机译：在这项研究中，通过将螯合聚醚胺与各种浓度的Cu，Sn，S粉末相结合，合成了Cu-Sn-S纳米墨水。 X射线衍射图谱表明，低浓度合成的纳米墨水几乎完全由SnS和Cu2S二元相组成。更高浓度的纳米油墨的合成减少了二元相的数量，并导致了三元相Cu4SnS4的出现。硫化后，从低浓度的纳米油墨中获得单相Cu2SnS3（CTS）薄膜。但是，在由高浓度的纳米油墨获得的薄膜中检测到诸如Cu 2 S的杂质。这可以归因于较低的浓度降低了所有元素的反应性的事实。结果，SnS相更容易和更快地反应，导致在硫化过程中早期形成化学计量的CTS薄膜。在这些反应条件下，Cu2S和SnS转变为CTS，从而防止形成不需要的Cu2S和Cu4SnS4相。拉曼光谱显示第二相Cu 2 S相保留在高浓度样品中，这是由于反应中由于更大比例的铜参与而导致反应性增加。低浓度样品的表面微观结构显示出紧密堆积的Cu2SnS3晶粒，具有平坦的形态和原子组成比为Cu：Sn：S = 34.69：15.90：49.41，接近化学计量比。霍尔测量表明，低浓度样品具有优异的电性能。即适用于薄膜太阳能电池的空穴浓度为5.23 x 10（17）cm（3），迁移率为14.2 cm（2）/ V-s和光带隙能量为1.346 eV。 （C）2016 Elsevier B.V.保留所有权利。

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  • 来源
    《Applied Surface Science》 |2016年第ptaa期|71-76|共6页
  • 作者

    Wang Chi-Jie; Shei Shih-Chang; Chang Shih-Chang; Chang Shoou-Jinn;

  • 作者单位

    Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan|Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan;

    Nation Univ Tainan, Dept Elect Engn, Tainan, Taiwan;

    Nation Univ Tainan, Dept Elect Engn, Tainan, Taiwan;

    Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan|Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    Sulfurization; Cu2SnS3; Thin films; Precursor;

    机译：硫化;Cu2SnS3;薄膜;前驱体;

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