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Investigation of p-type nanocrystalline silicon emitters for silicon heterojunction solar cells

机译：用于硅异质结太阳能电池的p型纳米晶硅发射极的研究

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摘要

P-type hydrogenated nanocrystalline silicon (p-nc-Si:H) films were prepared by plasma-enhanced chemical vapor deposition (PECVD) at 200 degrees C, using diborane (B2H6) diluted in hydrogen to a concentration of 1% as the doping gas. The influence of hydrogen dilution, boron doping and layer thickness on the structural, optical and electronic properties of nc-Si:H films was systematically studied by transmission, Raman, small-angle X-ray diffraction (SAXD), high resolution transmission electron microscopy (HRTEM) and Fourier transform infrared (FTIR) spectroscopies. The 20 nm thick nc-Si film with dark conductivity of 0.005 S/cm and crystalline volume fraction of 43.89% was obtained. By employing p-nc-Si:H as emitter layers, SHJ solar cells were fabricated. It was found that fill factor (FF) was significantly improved with increasing the p-layer thickness from 10 to 20 nm. Moreover, the SHJ solar cell with V-oc of 576 mV, J(sc) of 34.49 mA/cm(2), FF of 74.28%, and eta of 16.63% was obtained. (C) 2014 Elsevier B.V. All rights reserved.
机译：通过在氢气中稀释浓度为1％的乙硼烷（B2H6）在200摄氏度下通过等离子体增强化学气相沉积（PECVD）制备P型氢化纳米晶硅（p-nc-Si：H）膜加油站。通过透射，拉曼，小角X射线衍射（SAXD），高分辨率透射电子显微镜系统研究了氢稀释，硼掺杂和层厚对nc-Si：H膜结构，光学和电子性能的影响。 （HRTEM）和傅里叶变换红外（FTIR）光谱。获得具有0.005S / cm的暗电导率和43.89％的晶体体积分数的20nm厚的nc-Si膜。通过使用p-nc-Si：H作为发射极层，制造了SHJ太阳能电池。已发现，随着p层厚度从10纳米增加到20纳米，填充系数（FF）得到了显着改善。此外，获得了SHJ太阳能电池，其V-oc为576mV，J（sc）为34.49mA / cm（2），FF为74.28％，eta为16.63％。 （C）2014 Elsevier B.V.保留所有权利。

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  • 来源
    《Applied Surface Science》 |2015年第1期|152-159|共8页
  • 作者

    Qiao Zhi; Xie Xinjian; Hao Qiuyan; Wen Di; Xue Junming; Liu Caichi;

  • 作者单位

    Hebei Univ Technol, Sch Mat Sci & Engn, Tianjin 300130, Peoples R China|Shijiazhuang Tiedao Univ, Dept Math & Phys, Shijiazhuang 050043, Peoples R China;

    Hebei Univ Technol, Sch Mat Sci & Engn, Tianjin 300130, Peoples R China;

    Hebei Univ Technol, Sch Mat Sci & Engn, Tianjin 300130, Peoples R China;

    Hebei Univ Technol, Sch Mat Sci & Engn, Tianjin 300130, Peoples R China;

    China Hisun PV Technol Co Ltd, Hengshui 053000, Peoples R China;

    Hebei Univ Technol, Sch Mat Sci & Engn, Tianjin 300130, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    P-type; Nanocrystalline silicon; Heterojunction solar cells; PECVD;

    机译：P型;纳米晶硅;异质结太阳能电池;PECVD;

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