Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon

Dhar Sukanta; Mandal Sourav; Das Gourab; Mukhopadhyay Sumita; Ray Partha Pratim; Banerjee Chandan; Barua Asok Kumar

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Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon

机译：在p型晶体硅上具有新型氟化n型纳米晶体氧化硅发射极的硅异质结太阳能电池

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A novel fluorinated phosphorus doped silicon oxide based nanocrystalline material have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) Czochralski (CZ) wafers. The n-type nc-SiO:F:H material were deposited by radio frequency plasma enhanced chemical vapor deposition. Deposited films were characterized in detail by using atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), Raman, fourier transform infrared spectroscopy (FTIR) and optoelectronics properties have been studied using temperature dependent conductivity measurement, Ellipsometry, UV-vis spectrum analysis etc. It is observed that the cell fabricated with fluorinated silicon oxide emitter showing higher initial efficiency (eta = 15.64%, J(sc) = 32.10 mA/cm(2), V-oc = 0.630 V, FF = 0.77) for 1 cm(2) cell area compare to conventional n-a-Si:H emitter (14.73%) on flat c-Si wafer. These results indicate that n type nc-SiO: F: H material is a promising candidate for heterojunction solar cell on p-type crystalline wafers. The high Jsc value is associated with excellent quantum efficiencies at short wavelengths (<500 nm). (C) 2015 The Japan Society of Applied Physics

机译：一种新型的基于氟化磷掺杂的氧化硅的纳米晶体材料已被用于在平坦的p型晶体硅（c-Si）直拉（CZ）晶片上制备异质结太阳能电池。通过射频等离子体增强化学气相沉积法沉积n型nc-SiO：F：H材料。通过使用原子力显微镜（AFM），高分辨率透射电子显微镜（HRTEM），拉曼光谱，傅立叶变换红外光谱（FTIR）对沉积的薄膜进行了详细表征，并使用了与温度相关的电导率测量，椭偏仪，UV-vis研究了光电性能光谱分析等。观察到，用氟化硅氧化物发射极制成的电池显示出更高的初始效率（eta = 15.64％，J（sc）= 32.10 mA / cm（2），V-oc = 0.630 V，FF = 0.77） 1 cm（2）的电池面积与平面c-Si晶片上的常规na-Si：H发射极（14.73％）相比。这些结果表明，n型nc-SiO：F：H材料是p型晶体晶片上异质结太阳能电池的有前途的候选材料。高Jsc值与短波长（<500 nm）的出色量子效率有关。（C）2015年日本应用物理学会

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《Japanese journal of applied physics》 |2015年第8s1期|08KD03.1-08KD03.4|共4页
作者
Dhar Sukanta; Mandal Sourav; Das Gourab; Mukhopadhyay Sumita; Ray Partha Pratim; Banerjee Chandan; Barua Asok Kumar;
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Indian Inst Engn Sci & Technol, Ctr Excellence Green Energy & Sensor Syst, Sibpur 711103, Howrah, India.;

Indian Inst Engn Sci & Technol, Ctr Excellence Green Energy & Sensor Syst, Sibpur 711103, Howrah, India.;

Indian Inst Engn Sci & Technol, Ctr Excellence Green Energy & Sensor Syst, Sibpur 711103, Howrah, India.;

Indian Inst Engn Sci & Technol, Ctr Excellence Green Energy & Sensor Syst, Sibpur 711103, Howrah, India.;

Jadavpur Univ, Dept Phys, Kolkata 700032, India.;

Indian Inst Engn Sci & Technol, Ctr Excellence Green Energy & Sensor Syst, Sibpur 711103, Howrah, India.;

Indian Inst Engn Sci & Technol, Ctr Excellence Green Energy & Sensor Syst, Sibpur 711103, Howrah, India.;

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1. Preparation of Al-doped hydrogenated nanocrystalline cubic silicon carbide by VHF-PECVD for heterojunction emitter of n-type crystalline silicon solar cells [J] . Hamashita D., Miyajima S., Konagai M. Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion . 2012,第Null期

机译：VHF-PECVD法制备n型晶体硅太阳能电池异质结发射极掺杂铝的氢化纳米晶立方碳化硅
2. Ultra-thin nanocrystalline n-type silicon oxide front contact layers for rear emitter silicon heterojunction solar cells [J] . Mazzarella L., Morales-Vilches A. B., Korte L., Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion . 2018,第期

机译：用于后发射器硅杂角的超薄纳米晶n型氧化硅前触点层
3. Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers [J] . Xu Y, Hu ZH, Diao HW, Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2006,第9a20期

机译：在p型c-Si晶片上具有n型纳米晶硅发射极的异质结太阳能电池
4. Preparation of p-type Hydrogenated Nanocrystalline Cubic Silicon Carbide / n-type Crystalline Silicon Heterojunction Solar Cells by VHF-PECVD [C] . Daisuke Hamashita, Yasuyoshi Kurokawa, Makoto Konagai European Materials Research Society Spring Meeing,Symposium R . 2011

机译：VHF-PECVD制备P型氢化纳米晶立方碳碳化物/ N型晶体硅杂旋转太阳能电池
5. Low temperature surface passivation of crystalline silicon and its application to interdigitated back contact silicon heterojunction (ibc-shj) solar cell. [D] . Shu, Zhan. 2013

机译：晶体硅的低温表面钝化及其在指叉背接触硅异质结（ibc-shj）太阳能电池中的应用。
6. Improving the efficiency of rear emitter silicon solar cell using an optimized n-type silicon oxide front surface field layer [O] . Sangho Kim, Jinjoo Park, Pham Duy Phong, -1

机译：使用优化的n型氧化硅正面场层提高后发射极硅太阳能电池的效率
7. Preparation of p-type Hydrogenated Nanocrystalline Cubic Silicon Carbide / n-type Crystalline Silicon Heterojunction Solar Cells by VHF-PECVD [O] . Hamashita Daisuke, Kurokawa Yasuyoshi, Konagai Makoto 2011

机译：用VHF-PECVD制备p型氢化纳米晶碳化硅/ n型晶硅异质结太阳能电池。

Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon

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