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首页> 外文期刊>Applied Surface Science >Annealing induced electrical conduction and band gap variation in thermally reduced graphene oxide films with different sp~2/sp~3 fraction
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Annealing induced electrical conduction and band gap variation in thermally reduced graphene oxide films with different sp~2/sp~3 fraction

机译：不同sp〜2 / sp〜3分数的热还原氧化石墨烯薄膜的退火诱导导电和带隙变化

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Temperature dependent electrical conductivity of as prepared and thermally reduced graphene oxide (GO) thin films was measured in the range 300-520 K. As prepared GO films show very low conductivity ～6.8 × 10~(-6) S/cm at 300 K, which increases slowly till 370 K. A sharp increase in conductivity is observed in the temperature range 370-440 K, beyond which conductivity is thermally activated with activation energy 0.26 eV. Reduced GO films show an increase in conductivity at 300 K with increase in reduction temperature. GO films reduced at 400 ℃ exhibit high conductivity ～40 S/cm at 300 K, with very low activation energy 0.05 eV in the measured temperature range 300-520 K. The increase in conductivity after thermal reduction is due to an increase in the ratio sp~2/sp~3 bonded carbon atoms. The band gap of as prepared GO is 3.20 eV and it is decreased by approximately 0.4 eV in the case of thermally reduced GO at 400 ℃ in comparison to as prepared GO.
机译：在300-520 K范围内测量了制备的和热还原的氧化石墨烯（GO）薄膜的温度相关电导率。制备的GO膜在300 K时显示出非常低的电导率〜6.8×10〜（-6）S / cm ，直到370 K为止缓慢增加。在370-440 K的温度范围内观察到电导率急剧增加，超过此范围时，电导率被0.26 eV的热激活。还原的GO膜在300 K时的电导率随还原温度的升高而增加。在400℃还原的GO膜在300 K时显示出高电导率〜40 S / cm，在300-520 K的测量温度范围内具有非常低的活化能0.05 eV。热还原后电导率的增加是由于比例的增加sp〜2 / sp〜3键合的碳原子。制备的GO的带隙为3.20 eV，与制备的GO相比，在400℃下热还原的GO的带隙减小了约0.4 eV。

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