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首页> 外文期刊>Applied Surface Science >Reflectance modeling of electrochemically P-type porosified silicon by Drude-Lorentz model
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Reflectance modeling of electrochemically P-type porosified silicon by Drude-Lorentz model

机译：用Drude-Lorentz模型模拟电化学P型多孔硅的反射率

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摘要

Porous silicon remains a promising material for optoelectronic application; in this field monitoring of the refractive index profile of the porous layer is required. We present in this work a procedure based on Drude-Lorentz model for calculating the optical parameters such as the high- and low-frequency dielectric constants, the plasma frequency by fitting the reflectance spectra. The experimental data of different porous silicon layer created above the bulk silicon material by electrochemical etching are extracted from reflectance measurements. The reflectance spectra are recorded in the spectral range 350-2500 ran. First, our computational procedure has been validated by its application on mono-crystalline silicon for the determination of its optical parameters. A good agreement between our results and those found in other works has been achieved in the visible-NIR range. In the second step, the model was applied to porous silicon (PS) layers. Useful optical parameters like the refractive index and the extinction coefficient, respectively, n (λ) and k(λ), the band gap E_g, of different fabricated porous silicon layer are determined from simulated reflectance spectra. The correlation between the optical properties and the conditions of the electrochemical treatment was observed and analyzed. The main conclusion is that the reflected light from the porous silicon surface, although non-homogeneous and thus possessing the light scattering, is essentially smaller than the reflected light from the bulk crystalline silicon. These results show that the porous surface layer can act as an antireflection coating for silicon and could be used, in particular, in solar cells.
机译：多孔硅仍然是光电子应用的有前途的材料。在该领域中，需要监测多孔层的折射率分布。我们在这项工作中提出了一种基于Drude-Lorentz模型的程序，用于通过拟合反射光谱来计算光学参数，例如高频和低频介电常数，等离子体频率。从反射率测量中提取通过电化学蚀刻在块状硅材料上方形成的不同多孔硅层的实验数据。在350-2500nm的光谱范围内记录反射光谱。首先，我们的计算程序已经通过在单晶硅上确定其光学参数的应用得到了验证。在可见光-近红外范围内，我们的结果与其他工作的结果之间达成了良好的协议。在第二步中，将模型应用于多孔硅（PS）层。从模拟的反射光谱确定不同制造的多孔硅层的有用的光学参数，例如折射率和消光系数，分别为n（λ）和k（λ），带隙E_g。观察并分析了光学性质与电化学处理条件之间的相关性。主要结论是，来自多孔硅表面的反射光尽管不均匀，因此具有光散射特性，但其本质上要小于来自体晶硅的反射光。这些结果表明，多孔表面层可以用作硅的抗反射涂层，并且可以特别地用于太阳能电池中。

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  • 来源
    《Applied Surface Science》 |2014年第1期|34-38|共5页
  • 作者

    M. Kadi; E.M. Media; H. Gueddaoui; R. Outemzabet;

  • 作者单位

    Semiconductor Material and Metallic Oxide Laboratory, Faculty of Physics, USTHB, BP 32, El-Alia, Bab-Ezzouar, 16117 Algiers, Algeria;

    Semiconductor Material and Metallic Oxide Laboratory, Faculty of Physics, USTHB, BP 32, El-Alia, Bab-Ezzouar, 16117 Algiers, Algeria;

    Semiconductor Material and Metallic Oxide Laboratory, Faculty of Physics, USTHB, BP 32, El-Alia, Bab-Ezzouar, 16117 Algiers, Algeria;

    Semiconductor Material and Metallic Oxide Laboratory, Faculty of Physics, USTHB, BP 32, El-Alia, Bab-Ezzouar, 16117 Algiers, Algeria;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Reflectance; Dispersion; Optical parameters; Porous silicon; Absorption;

    机译：反射率分散;光学参数多孔硅吸收性;

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