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Method of determining the model of oxygen precipitation behaviour in a silicon monocrystalline wafer, method of determining a process for producing silicon monocrystalline wafers using said model, and recording medium carrying a program for determining the oxygen precipitation behaviour model in a silicon monocrystalline wafer
Method of determining the model of oxygen precipitation behaviour in a silicon monocrystalline wafer, method of determining a process for producing silicon monocrystalline wafers using said model, and recording medium carrying a program for determining the oxygen precipitation behaviour model in a silicon monocrystalline wafer
A method of determining oxygen precipitation behavior in a silicon monocrystal through use of a programmed computer. According to this method, an initial oxygen concentration of a silicon monocrystal, an impurity concentration or resistivity of the silicon monocrystal, and conditions of heat treatment performed on the silicon monocrystal are input, and an amount of precipitated oxygen and bulk defect density of the silicon monocrystal after the heat treatment are calculated based on the input data. The method enables quick, simple, and accurate determination of an amount of precipitated oxygen and bulk defect density in silicon during or after heat treatment.
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