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首页> 外文期刊>Applied Surface Science >Annealing temperature dependence of the structures and properties of Co-implanted ZnO films
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Annealing temperature dependence of the structures and properties of Co-implanted ZnO films

机译:退火温度对共注入ZnO薄膜结构和性能的影响

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摘要

The effects of thermal annealing treatment on the structural, electrical, optical and magnetic properties of Co-implanted ZnO (0001) films have been investigated in detail. The crystalline structure of the damaged region caused by ion implantation has been recovered via the thermal annealing at the temperature of 900 ℃ and above, and no Co clusters or its related oxide phases have been observed. The electrical and optical properties of the annealed films have shown strong dependence on the annealing temperature. The zero field cooling magnetization curves of the annealed films have varied from concave shape to convex one as the annealing temperature increased from 750 ℃ to 1000 ℃, which are possibly tuned by the changes of the ratio of the itinerant carriers over the localized spin density. The low temperature magnetic hysteresis loops have indicated paramagnetic behavior for the annealed films with weak ferromagnetic characteristics. The ferromagnetism is attributed to the substituted Co~(2+) ions and vacancy defects, while the paramagnetism could be induced by ionized interstitial Zn defects.
机译:详细研究了热退火处理对共注入ZnO(0001)薄膜的结构,电,光和磁性能的影响。通过离子注入引起的损伤区域的晶体结构已经在900℃及以上的温度下通过热退火恢复,没有观察到Co团簇或其相关的氧化物相。退火膜的电学和光学性质显示出对退火温度的强烈依赖性。随着退火温度从750℃增加到1000℃,退火膜的零场冷却磁化曲线从凹形变为凸形,这可能是由于流动剂载流子的比例随局部自旋密度的变化而改变的。低温磁滞回线表明具有弱铁磁特性的退火薄膜具有顺磁性。铁磁性归因于取代的Co〜(2+)离子和空位缺陷,而顺磁性可能是由离子化的间隙Zn缺陷引起的。

著录项

  • 来源
    《Applied Surface Science》 |2014年第15期|152-158|共7页
  • 作者单位

    School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, Jiangsu, PR China;

    School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, Jiangsu, PR China;

    School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, Jiangsu, PR China;

    School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, Jiangsu, PR China;

    School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, Jiangsu, PR China;

    School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, Jiangsu, PR China;

    School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, Jiangsu, PR China;

    School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, Jiangsu, PR China;

    School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, Jiangsu, PR China;

    School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, Jiangsu, PR China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Zinc oxide films; Magnetic films; Thin film structure; Ion-implantation;

    机译:氧化锌膜;磁性膜;薄膜结构;离子注入;

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