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首页> 外文期刊>Applied Surface Science >XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
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XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition

机译：等离子增强原子层沉积AlN薄膜的XPS分析

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X-ray photoelectron spectroscopy has been used to investigate the properties of AlN films deposited using a low temperature plasma-enhanced atomic layer deposition process. Aluminum, nitrogen and oxygen peaks were observed in the survey spectra. A thin layer of sputtered aluminum was used as a diffusion barrier, in order to distinguish between oxygen introduced during deposition and post-deposition. The results show no post-deposition oxidation. Furthermore, the samples were scanned at various depths, and the peaks were then deconvolved into the constituent subpeaks. The results show no Al-O-N bonding in the film. This result supports the models that propose that oxygen at low concentrations in A1N bonds exclusively to aluminum and forms planes of aluminum oxide octahedrons dispersed in the lattice.
机译：X射线光电子能谱已被用于研究使用低温等离子体增强原子层沉积工艺沉积的AlN膜的性能。在调查光谱中观察到铝，氮和氧的峰。溅射铝薄层用作扩散阻挡层，以区分沉积过程中和沉积后引入的氧气。结果表明没有沉积后氧化。此外，在不同深度扫描样品，然后将峰解卷积为组成的亚峰。结果表明膜中没有Al-O-N键。该结果支持了以下模型：AlN中低浓度的氧仅与铝结合，并形成分散在晶格中的氧化铝八面体平面。

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