Improvement in electrical characteristics of HfO_2 gate dielectrics treated by remote NH3 plasma

著录项

• 来源
  《Applied Surface Science》 |2013年第1期|89-93|共5页
• 作者

  Li-Tien Huang; Ming-Lun Chang; Jhih-Jie Huang; Hsin-Chih Lin; Chin-Lung Kuo; Min-Hung Lee; Chee Wee Liu; Miin-Jang Chen;

  展开▼
• 作者单位

  Department of Materials Science and Engineering, National Taiwan University, No. I, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan;

  Department of Materials Science and Engineering, National Taiwan University, No. I, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan;

  Department of Materials Science and Engineering, National Taiwan University, No. I, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan;

  Department of Materials Science and Engineering, National Taiwan University, No. I, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan;

  Department of Materials Science and Engineering, National Taiwan University, No. I, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan;

  Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan;

  Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, Center for Emerging Material and Advanced Devices, National Taiwan University, Taipei, Taiwan, National Nano Device Laboratories, Hsinchu 30078, Taiwan;

  Department of Materials Science and Engineering, National Taiwan University, No. I, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan, Center for Emerging Material and Advanced Devices, National Taiwan University, Taipei, Taiwan, National Nano Device Laboratories, Hsinchu 30078, Taiwan;

  展开▼
• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  hafnium oxide; atomic layer deposition; nitridation; NH_3; remote plasma;

  机译：氧化原子层沉积;氮化NH_3;远程等离子体;