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首页> 外文期刊>Applied Surface Science >Thermal stability of pulsed laser deposited iridium oxide thin films at low oxygen atmosphere
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Thermal stability of pulsed laser deposited iridium oxide thin films at low oxygen atmosphere

机译：低氧气氛下脉冲激光沉积氧化铱薄膜的热稳定性

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摘要

Iridium oxide (IrO_2) thin films have been regarded as a leading candidate for bottom electrode and diffusion barrier of ferroelectric capacitors, some process related issues need to be considered before integrating ferroelectric capacitors into memory cells. This paper presents the thermal stability of pulsed laser deposited IrO_2 thin films at low oxygen atmosphere. Emphasis was given on the effect of post-deposition annealing temperature at different oxygen pressure (P_(O2)) on the crystal structure, surface morphology, electrical resistivity, carrier concentration and mobility of IrO_2 thin films. The results showed that the thermal stability of IrO_2 thin films was strongly dependent on the oxygen pressure and annealing temperature. IrO_2 thin films can stably exist below 923 K at P_(O2)= 1 Pa, which had a higher stability than the previous reported results. The surface morphology of IrO_2 thin films depended on P_(O2) and annealing temperature, showing a flat and uniform surface for the annealed films. Electrical properties were found to be sensitive to both the annealing temperature and oxygen pressure. The room-temperature resistivity of IrO_2 thin films with a value of 49-58 μΩ cm increased with annealing temperature at P_(O2)=1 Pa. The thermal stability of IrO_2 thin films as a function of oxygen pressure and annealing temperature was almost consistent with thermodynamic calculation.
机译：氧化铱（IrO_2）薄膜被认为是铁电电容器底部电极和扩散势垒的主要候选材料，在将铁电电容器集成到存储单元中之前，需要考虑一些与工艺相关的问题。本文介绍了脉冲激光沉积的IrO_2薄膜在低氧气氛下的热稳定性。重点讨论了不同氧压（P_（O2））下沉积后退火温度对IrO_2薄膜晶体结构，表面形貌，电阻率，载流子浓度和迁移率的影响。结果表明，IrO_2薄膜的热稳定性强烈依赖于氧气压力和退火温度。 IrO_2薄膜在P_（O2）= 1 Pa的情况下可以稳定地存在于923 K以下，其稳定性高于先前报道的结果。 IrO_2薄膜的表面形貌取决于P_（O2）和退火温度，退火后的薄膜表面平坦而均匀。发现电性能对退火温度和氧气压力均敏感。在P_（O2）= 1 Pa时，随着退火温度的升高，IrO_2薄膜的室温电阻率在49-58μΩcm左右。IrO_2薄膜的热稳定性随氧气压力和退火温度的变化基本一致。进行热力学计算。

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  • 来源
    《Applied Surface Science》 |2013年第ptab期|324-330|共7页
  • 作者

    Yansheng Gong; Chuanbin Wang; Qiang Shen; Lianmeng Zhang;

  • 作者单位

    Faculty of Materials Science and Chemistry, China University of Geosciences, 388 Lumo Street, Wuhan 430074, Hubei, China;

    State Key Laboratory of Advanced Technology for Material Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China;

    State Key Laboratory of Advanced Technology for Material Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China;

    State Key Laboratory of Advanced Technology for Material Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    IrO_2 thin films; Thermal stability; Low oxygen pressure; Pulsed laser deposition;

    机译：IrO_2薄膜;热稳定性;氧气压力低;脉冲激光沉积;

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