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Fabrication of nanorod InGaN/GaN multiple quantum wells with self-assembled Ni nano-island masks

机译:自组装镍纳米岛掩模制备纳米棒InGaN / GaN多量子阱

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摘要

The evolution of nano-sized Ni metal islands deposited by electron-beam evaporation on InGaN/GaN multiple quantum wells (MQWs) surface as a function of rapid thermal annealing (RTA) temperature and initial deposited Ni film thickness is reported. It is shown that the dimension and density of self-assembled Ni nano-islands depend critically on the annealing temperature and deposited Ni film thickness. The formation of the islands is described in terms of Ostwald ripening and coarsening mechanisms. Subsequently, the nano-masks are successfully applied to fabricate nanorod InGaN/GaN MQWs by using inductively coupled-plasma (ICP) etching. Uniform etching rate has been obtained by comparing the nanorod height etched for different times. Photoluminescence (PL) investigation shows the nanorod MQWs with optimized light output efficiency could be acquired under particular ICP and RF etching power. Strain relaxation and dislocation reduction effect would contribute to enhanced light output of nanorod InGaN/GaN MQWs compared with the as-grown plane MQWs.
机译:报道了通过电子束蒸发在InGaN / GaN多量子阱(MQWs)表面上沉积的纳米尺寸Ni金属岛的变化与快速热退火(RTA)温度和初始沉积Ni膜厚度的关系。结果表明,自组装Ni纳米岛的尺寸和密度主要取决于退火温度和沉积的Ni膜厚度。岛的形成是根据奥斯特瓦尔德(Ostwald)成熟和粗化机制来描述的。随后,通过使用电感耦合等离子体(ICP)蚀刻成功地将纳米掩模应用于制造纳米棒InGaN / GaN MQW。通过比较不同时间刻蚀的纳米棒的高度,可以获得均匀的刻蚀速率。光致发光(PL)研究表明,可以在特定的ICP和RF蚀刻功率下获得具有优化的光输出效率的纳米棒MQW。与生长的平面MQW相比,应变弛豫和位错减少效果将有助于提高纳米棒InGaN / GaN MQW的光输出。

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