机译:自组装镍纳米岛掩模制备纳米棒InGaN / GaN多量子阱
School of Science, Jiangnan University, No. 1800, Lihu Road, Wuxi 214122, China;
School of Science, Jiangnan University, Wuxi 214122, China;
School of Science, Jiangnan University, Wuxi 214122, China;
Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China;
School of Science, Jiangnan University, Wuxi 214122, China;
School of Science, Jiangnan University, Wuxi 214122, China;
School of Mechanical and Electronic Engineering, Chuzhou University, Chuzhou 239000, China;
Ni nano-island; Rapid thermal annealing; Inductively coupled-plasma etching; Nanorod; InGaN/GaN MQWs;
机译:使用nikel纳米掩模和干法刻蚀InGaN基发光二极管形成纳米棒InGaN / GaN多量子阱
机译:具有自组装Ni金属岛的InGaN / GaN纳米棒发光二极管的制备
机译:具有自组装Ni金属岛的InGaN / GaN纳米棒发光二极管的制备
机译:Ni纳米掩模制备InGaN多量子阱纳米棒
机译:以极性,半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
机译:嵌入GaN纳米棒中的InGaN量子盘的线性偏振光致发光
机译:光吸收透视的三维荧光共聚焦纳米孔纳米杆纳米棒