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首页> 外文期刊>Applied Surface Science >Characterization of silicon nitride thin films deposited by hot-wire CVD at low gas flow rates
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Characterization of silicon nitride thin films deposited by hot-wire CVD at low gas flow rates

机译：在低气体流速下通过热线CVD沉积的氮化硅薄膜的特性

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摘要

We examined the chemical, structural, mechanical and optical properties of amorphous hydrogenated silicon nitride thin films deposited by hot-wire chemical vapour deposition using SiH_4, NH_3 and H_2 gases at total flow rates below 33 sccm. Time of flight secondary ion mass spectroscopy reveal that the film surfaces consist of predominantly Si with hydrogenated Si_xN_yO_z species. Energy dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy corroborate on the N/Si ratio. Electron energy loss spectroscopy discloses that the thickness of the nitrogen rich oxidized interface between the SiN_x films and the c-Si substrate decrease with an enhancing NH_3 flow rate. By varying the NH_3 flow rate, dense SiN-x films can be realized with hydrogen content between 16 and 9 at.%, a refractive index between 3.5 and 1.9 and optical band gap ranging from 2 to 4.5 eV. The SiN_x film stress is compressive for N/Si < 0.4 and tensile for higher N/Si > 0.55. Mechanisms relating the HWCVD conditions and the film structure and properties are proposed.
机译：我们检查了通过使用SiH_4，NH_3和H_2气体以低于33 sccm的总流量通过热线化学气相沉积法沉积的非晶态氢化氮化硅薄膜的化学，结构，机械和光学性质。飞行时间二次离子质谱分析表明，膜表面主要由具有氢化Si_xN_yO_z物种的Si组成。能量色散X射线能谱和X射线光电子能谱证实了N / Si比。电子能量损失谱揭示，随着NH_3流量的增加，SiN_x膜与c-Si衬底之间的富氮氧化界面的厚度减小。通过改变NH_3流速，可以实现致密的SiN-x膜，其氢含量在16至9 at。％之间，折射率在3.5至1.9之间，光学带隙在2至4.5 eV之间。 SiN_x膜应力在N / Si <0.4时是压缩性的，而在N / Si> 0.55时是拉伸性的。提出了与HWCVD条件以及膜结构和性质有关的机理。

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  • 来源
    《Applied Surface Science》 |2013年第ptab期|440-449|共10页
  • 作者

    Clive J. Oliphant; Christopher J. Arendse; Theophillus F.G. Muller; Dirk Knoesen;

  • 作者单位

    Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535, South Africa,National Metrology Institute of South Africa, Private Bag X34, Lynwood Ridge, Pretoria 0040, South Africa;

    Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535, South Africa;

    Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535, South Africa;

    Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535, South Africa;

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  • 正文语种 eng
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  • 关键词

    Surface roughness; Composition; Stress; Microstructure; Crystallinity; Band gap;

    机译：表面粗糙度;组成;强调;微观结构结晶度带隙;

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