Investigation of thermally grown oxide on 4H-SiC by a combination of H_2O and HNO_3 vapor with varied HNO_3 solution heating temperature

著录项

• 来源
  《Applied Surface Science》 |2013年第ptab期|795-804|共10页
• 作者

  Banu Poobalan; Jeong Hyun Moon; Sang-Cheol Kim; Sung-Jae Joo; Wook Bahng; In Ho Kang; Nam-Kyun Kim; Kuan Yew Cheong;

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• 作者单位

  Electronic Materials Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia;

  Power Semiconductor Research Centre, Korea Electrotechnology Research Institute, P.O. Box 20, Changwon, Gyungnam 641-120, South Korea;

  Power Semiconductor Research Centre, Korea Electrotechnology Research Institute, P.O. Box 20, Changwon, Gyungnam 641-120, South Korea;

  Power Semiconductor Research Centre, Korea Electrotechnology Research Institute, P.O. Box 20, Changwon, Gyungnam 641-120, South Korea;

  Power Semiconductor Research Centre, Korea Electrotechnology Research Institute, P.O. Box 20, Changwon, Gyungnam 641-120, South Korea;

  Power Semiconductor Research Centre, Korea Electrotechnology Research Institute, P.O. Box 20, Changwon, Gyungnam 641-120, South Korea;

  Power Semiconductor Research Centre, Korea Electrotechnology Research Institute, P.O. Box 20, Changwon, Gyungnam 641-120, South Korea;

  Electronic Materials Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Silicon carbide; Silicon dioxide; Wet nitridation; HNO_3 vapor;

  机译：碳化硅;二氧化硅;湿氮化HNO_3蒸气;